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MCR8SDG PDF预览

MCR8SDG

更新时间: 2024-11-19 14:56:31
品牌 Logo 应用领域
力特 - LITTELFUSE 电机
页数 文件大小 规格书
5页 602K
描述
该硅控整流器主要用于半波交流控制应用,例如电机控制、加热控制与电源;或用于需要半波硅门控设备的应用。 功能与特色:

MCR8SDG 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:2.12
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:936933Samacsys Pin Count:3
Samacsys Part Category:ThyristorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220AB (L-Package)Samacsys Released Date:2018-10-07 16:37:03
Is Samacsys:N外壳连接:ANODE
配置:SINGLE最大直流栅极触发电流:0.2 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:8 A
断态重复峰值电压:400 V重复峰值反向电压:400 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

MCR8SDG 数据手册

 浏览型号MCR8SDG的Datasheet PDF文件第2页浏览型号MCR8SDG的Datasheet PDF文件第3页浏览型号MCR8SDG的Datasheet PDF文件第4页浏览型号MCR8SDG的Datasheet PDF文件第5页 
Thyristors Datasheet  
MCR8SDG, MCR8SMG, MCR8SNG  
Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V  
Pb  
Description  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half−wave, silicon gate−controlled devices are needed.  
Features  
Sensitive Gate Allows  
Triggering by Microcontrollers  
and other Logic Circuits  
Glass Passivated Junctions  
for Reliability and Uniformity  
Minimum and Maximum  
Values of IGT, VGT and IH  
Specified for Ease of Design  
Blocking Voltage to 800 V  
On−State Current Rating of 8  
A RMS at 80°C  
Immunity to dv/dt − 5 V/μsec  
Minimum at 110°C  
High Surge Current Capability  
− 80 A  
These are Pb−Free Devices  
Additional Information  
Rugged, Economical  
TO−220AB Package  
Pin Out  
Resources  
Accessories  
Samples  
4
Functional Diagram  
G
TO-220AB  
Case 221A  
Style 4  
A
K
1
2
3
© 2021 Littelfuse, Inc.  
Specifications are subject to change without notice.  
1
Revised: GD. 05/24/21  

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