MCR8S

更新时间： 2024-11-25 22:24:31

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		可控硅整流器
页数	文件大小	规格书
2页	70K
描述
Silicon Controlled Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCR8S 数据手册

Order this document

by MCR8S/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

SCRs

8 AMPERES RMS

400 thru 800

VOLTS

Designed primarily for half–wave ac control applications, such as motor

controls, heating controls, and power supplies; or wherever half–wave, silicon

gate–controlled devices are needed.

•

Blocking Voltage to 800 Volts

On-State Current Rating of 8 Amperes RMS

High Surge Current Capability — 90 Amperes

Industry Standard TO–220AB Package for Ease of Design

Glass Passivated Junctions for Reliability and Uniformity

Low Trigger Currents, 200µA Maximum for Direct Driving from Integrated Circuits

CASE 221A–06

(TO-220AB)

Style 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (1)

Peak Repetitive Reverse Voltage

DRM

RRM

Volts

(T = –40 to 110°C; R

= 1.0 KΩ)

MCR8SD

MCR8SM

MCR8SN

400

600

800

On-State RMS Current

T(RMS)

(All Conduction Angles)

Peak Non-repetitive Surge Current

(One Half Cycle, 60 Hz, T = 125°C)

TSM

Circuit Fusing Consideration (t = 8.3 ms)

I t

5.0

A sec

Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)

Watts

Average Gate Power (t = 8.3 ms, T = 80°C)

0.5

G(AV)

Peak Gate Current (Pulse Width ≤ 1.0 µs, T = 80°C)

2.0

Operating Junction Temperature Range

Storage Temperature Range

–40 to +110

–40 to +150

°C

stg

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.2

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

(1) andV

260

DRM

foralltypescanbeappliedonacontinuousbasis. Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall

RRM

notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthe

voltage ratings of the devices are exceeded.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1995

中文翻译

下载PDF

与MCR8S相关器件

型号	品牌	获取价格	描述	数据表
MCR8SD	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8SD	MOTOROLA	获取价格	8A, 400V, SCR, TO-220AB, CASE 221A, 3 PIN
MCR8SD-AF	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8SD-AK	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8SD-AN	MOTOROLA	获取价格	8A, 400V, SCR, TO-220AB
MCR8SD-AS	MOTOROLA	获取价格	8A, 400V, SCR, TO-220AB
MCR8SD-AU	MOTOROLA	获取价格	8A, 400V, SCR, TO-220AB
MCR8SD-BC	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8SD-BD	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8SD-BG	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB

与MCR8S相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR8S

MCR8S 数据手册

与MCR8S相关器件

与MCR8S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR8S

MCR8S 数据手册

与MCR8S相关器件

与MCR8S相关文章

您还可以找

您在本页遇到什么问题？