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MCR72-8G

更新时间： 2024-11-23 04:16:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅
页数 文件大小 规格书
6页 64K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR72-8G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：CASE 221A-09, 3 PIN针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.1外壳连接：ANODE
配置：SINGLE最大直流栅极触发电流：0.2 mA
最大直流栅极触发电压：1.5 V最大维持电流：6 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大漏电流：0.5 mA
通态非重复峰值电流：100 A元件数量：1
端子数量：3最大通态电流：8000 A
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大均方根通态电流：8 A
断态重复峰值电压：600 V重复峰值反向电压：600 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
触发设备类型：SCRBase Number Matches：1

MCR72-8G 数据手册

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MCR72−3, MCR72−6,  
MCR72−8  
Preferred Device  
Sensitive Gate Silicon  
Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for industrial and consumer applications such as  
temperature, light and speed control; process and remote controls;  
warning systems; capacitive discharge circuits and MPU interface.  
http://onsemi.com  
SCRs  
Features  
8 AMPERES RMS  
100 thru 600 VOLTS  
• Center Gate Geometry for Uniform Current Density  
• All Diffused and Glass-Passivated Junctions for Parameter  
Uniformity and Stability  
• Small, Rugged Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Low Trigger Currents, 200 mA Maximum for Direct Driving from  
Integrated Circuits  
G
A
K
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(T = *40 to 110°C, Sine Wave,  
J
TO−220AB  
CASE 221A−07  
STYLE 3  
50 to 60 Hz, Gate Open)  
MCR72−3  
MCR72−6  
MCR72−8  
100  
400  
600  
1
2
3
On-State RMS Current  
(180° Conduction Angles; T = 83°C)  
I
8.0  
A
A
T(RMS)  
C
Peak Non-Repetitive Surge Current  
I
100  
TSM  
(1/2 Cycle, 60 Hz, T = 110°C)  
J
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
40  
A s  
Forward Peak Gate Voltage  
V
"5.0  
V
A
GM  
TO−220AB  
CASE 221A−09  
STYLE 3  
(t ≤ 10 ms, T = 83°C)  
C
Forward Peak Gate Current  
I
1.0  
5.0  
GM  
(t ≤ 10 ms, T = 83°C)  
C
1
2
3
Forward Peak Gate Power  
P
W
GM  
(t ≤ 10 ms, T = 83°C)  
C
Average Gate Power (t = 8.3 ms, T = 83°C)  
P
0.75  
−40 to +110  
−40 to +150  
8.0  
W
°C  
C
G(AV)  
PIN ASSIGNMENT  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
J
1
Cathode  
Anode  
Gate  
T
°C  
stg  
2
3
4
−
in. lb.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
MARKING AND ORDERING INFORMATION  
See detailed marking, ordering, and shipping information in  
the package dimensions section on page 4 of this data sheet.  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 20005  
1
Publication Order Number:  
December, 2005 − Rev. 3  
MCR72/D  
 
123456

中文翻译

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MCR72-8G 替代型号

型号 品牌 替代类型 描述 数据表
MCR72-8TG ONSEMI

完全替代

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
TS820-600T STMICROELECTRONICS

功能相似

 Sensitive and standard 8 A SCRs
TYN608RG STMICROELECTRONICS

功能相似

 8A SCRs

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MCR72-8-PBF DIGITRON

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MCR72-8-S MOTOROLA

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MCR72-8T ONSEMI

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 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR72-8-T MOTOROLA

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 		8A, 600V, SCR, TO-220AB
MCR72-8TG ONSEMI

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 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR72-8TG ROCHESTER

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 		8A, 600V, SCR, TO-220AB, CASE 221A-09, 3 PIN
MCR72-8TG LITTELFUSE

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 		此硅控整流器专门用于工业和消费应用，例如温度、光线和速度控制；过程和远程控制；警报系统；电
MCR72-8-U MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB

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