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MCR72-3 PDF预览

MCR72-3

更新时间: 2024-09-15 22:46:19
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置可控硅整流器
页数 文件大小 规格书
4页 84K
描述
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

MCR72-3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.06
Is Samacsys:N外壳连接:ANODE
配置:SINGLE关态电压最小值的临界上升速率:10 V/us
最大直流栅极触发电流:0.2 mA最大直流栅极触发电压:1.5 V
最大维持电流:6 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大漏电流:0.5 mA通态非重复峰值电流:100 A
元件数量:1端子数量:3
最大通态电流:8000 A最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:8 A断态重复峰值电压:100 V
重复峰值反向电压:100 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

MCR72-3 数据手册

 浏览型号MCR72-3的Datasheet PDF文件第2页浏览型号MCR72-3的Datasheet PDF文件第3页浏览型号MCR72-3的Datasheet PDF文件第4页 
Preferred Device  
Reverse Blocking Thyristors  
http://onsemi.com  
Designed for industrial and consumer applications such as  
temperature, light and speed control; process and remote controls;  
warning systems; capacitive discharge circuits and MPU interface.  
Center Gate Geometry for Uniform Current Density  
All Diffused and Glass-Passivated Junctions for Parameter  
Uniformity and Stability  
SCRs  
8 AMPERES RMS  
100 thru 600 VOLTS  
G
Small, Rugged Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Low Trigger Currents, 200 µA Maximum for Direct Driving from  
Integrated Circuits  
A
K
Device Marking: Logo, Device Type, e.g., MCR72–3, Date Code  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(T = 40 to 110°C, Sine Wave,  
50 to 60 Hz, Gate Open) MCR72–3  
V
RRM  
J
100  
400  
600  
1
MCR72–6  
MCR72–8  
2
3
TO–220AB  
CASE 221A  
STYLE 3  
On-State RMS Current  
(180° Conduction Angles; T = 83°C)  
I
8.0  
100  
40  
Amps  
Amps  
T(RMS)  
C
Peak Non-Repetitive Surge Current  
I
TSM  
(1/2 Cycle, 60 Hz, T = 110°C)  
J
PIN ASSIGNMENT  
Cathode  
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
1
2
3
4
Anode  
Forward Peak Gate Voltage  
V
GM  
5.0  
1.0  
5.0  
0.75  
Volts  
Amp  
Watts  
Watt  
°C  
Gate  
(t 10 µs, T = 83°C)  
C
Anode  
Forward Peak Gate Current  
I
GM  
(t 10 µs, T = 83°C)  
C
Forward Peak Gate Power  
P
GM  
ORDERING INFORMATION  
(t 10 µs, T = 83°C)  
C
Device  
Package  
Shipping  
Average Gate Power  
P
G(AV)  
(t = 8.3 ms, T = 83°C)  
C
MCR72–3  
MCR72–6  
MCR72–8  
TO220AB  
TO220AB  
TO220AB  
500/Box  
500/Box  
500/Box  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
J
40 to  
+110  
T
stg  
40 to  
+150  
°C  
Preferred devices are recommended choices for future use  
8.0  
in. lb.  
and best overall value.  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Ratings  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
February, 2000 – Rev. 2  
MCR72/D  

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