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MCR69-003 PDF预览

MCR69-003

更新时间： 2024-11-09 21:09:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 47K
描述
Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 500-BLKBX

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中文翻译

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MCR69-003 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.72
JESD-609代码：e0端子面层：Tin/Lead (Sn/Pb)
触发设备类型：SCRBase Number Matches：1

MCR69-003 数据手册

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MCR69−2, MCR69−3  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for overvoltage protection in crowbar circuits.  
Features  
http://onsemi.com  
• Glass-Passivated Junctions for Greater Parameter Stability and  
Reliability  
SCRs  
25 AMPERES RMS  
50 thru 100 VOLTS  
• Center-Gate Geometry for Uniform Current Spreading Enabling  
High Discharge Current  
• Small Rugged, Thermowatt Package Constructed for Low Thermal  
Resistance and Maximum Power Dissipation and Durability  
• High Capacitor Discharge Current, 750 Amps  
G
• Pb−Free Packages are Available*  
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
MARKING  
DIAGRAM  
Peak Repetitive Off−State Voltage (Note 1)  
(T = *40 to +125°C, Gate Open)  
V
DRM,  
V
V
RRM  
J
4
MCR69−2  
MCR69−3  
50  
100  
AYWW  
MCR69x  
AKA  
Peak Discharge Current (Note 2)  
On-State RMS Current  
I
750  
25  
A
A
TM  
TO−220AB  
CASE 221A  
STYLE 3  
I
T(RMS)  
(180° Conduction Angles; T = 85°C)  
C
1
Average On-State Current  
(180° Conduction Angles; T = 85°C)  
I
16  
A
A
T(AV)  
2
3
C
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Peak Non-Repetitive Surge Current  
I
300  
TSM  
(1/2 Cycle, Sine Wave, 60 Hz, T = 125°C)  
J
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
Forward Peak Gate Current  
I t  
375  
2.0  
A s  
MCR69 = Device Code  
x
I
A
= 2 or 3  
GM  
(t ≤ 1.0 ms, T = 85°C)  
AKA  
= Location Code  
C
Forward Peak Gate Power  
P
20  
W
W
GM  
(t ≤ 1.0 ms, T = 85°C)  
PIN ASSIGNMENT  
Cathode  
C
Forward Average Gate Power  
P
G(AV)  
0.5  
1
2
3
4
(t = 8.3 ms, T = 85°C)  
C
Anode  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
−40 to +125  
−40 to +150  
8.0  
°C  
°C  
J
Gate  
T
stg  
Anode  
−
in. lb.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MCR69−2  
TO220AB  
500/Box  
500/Box  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MCR69−2G  
TO220AB  
(Pb−Free)  
MCR69−3  
TO220AB  
500/Box  
500/Box  
2. Ratings apply for t = 1 ms. See Figure 1 for I  
capability for various  
w
TM  
duration of an exponentially decaying current waveform, t is defined as  
5 time constants of an exponentially decaying current pulse.  
3. Test Conditions: I = 150 mA, V = Rated V  
w
MCR69−3G  
TO220AB  
(Pb−Free)  
, I = Rated Value, T = 125°C.  
G
D
DRM TM  
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
December, 2004 − Rev. 1  
MCR69/D  
 
123456

中文翻译

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 		Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Inpu
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MCR69-2 ONSEMI

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 		SILICON CONTROLLED RECTIFIERS
MCR69-2 DIGITRON

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 		Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Inpu
MCR69-2-16 MOTOROLA

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 		Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220, 2 PI
MCR69-2-A MOTOROLA

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 		Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB
MCR69-2-A16A MOTOROLA

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 		Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220, 3 PI
MCR69-2-AC MOTOROLA

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 		25A, 50V, SCR, TO-220AB
MCR69-2-AD MOTOROLA

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 		25A, 50V, SCR, TO-220AB
MCR69-2-AF MOTOROLA

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 		Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB

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