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MCR310-8G PDF预览

MCR310-8G

更新时间: 2024-11-25 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置可控硅整流器
页数 文件大小 规格书
3页 50K
描述
Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors

MCR310-8G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.16Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:0.2 mA最大直流栅极触发电压:1.5 V
最大维持电流:6 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大漏电流:0.5 mA通态非重复峰值电流:100 A
元件数量:1端子数量:3
最大通态电流:10000 A最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:10 A断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:SCR
Base Number Matches:1

MCR310-8G 数据手册

 浏览型号MCR310-8G的Datasheet PDF文件第2页浏览型号MCR310-8G的Datasheet PDF文件第3页 
MCR310 Series  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Triode Thyristors  
Designed for industrial and consumer applications such as  
temperature, light and speed control; process and remote controls;  
warning systems; capacitive discharge circuits and MPU interface.  
Center Gate Geometry for Uniform Current Density  
http://onsemi.com  
All Diffused and Glass-Passivated Junctions for Parameter Uniformity  
and Stability  
SCRs  
10 AMPERES RMS  
400 thru 800 VOLTS  
Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Low Trigger Currents, 200 mA Maximum for Direct Driving from  
Integrated Circuits  
G
A
C
Pb−Free Packages are Available  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
4
Peak Repetitive Forward and Reverse  
Blocking Voltage  
V
V
Volts  
DRM  
or  
(1)  
(T = −40 to 110°C)  
J
RRM  
(1/2 Sine Wave, R = 1 kΩ)  
GK  
MCR310-6  
MCR310-8  
MCR310-10  
400  
600  
800  
MCR310−xG  
AYWW  
1
2
3
On-State RMS Current (T = 75°C)  
I
10  
Amps  
Amps  
C
T(RMS)  
TO−220AB  
CASE 221A  
STYLE 3  
Peak Non-repetitive Surge Current  
I
100  
TSM  
(1/2 Cycle, 60 Hz, T = −40 to 110°C)  
J
2
2
Circuit Fusing (t = 8.3 ms)  
Peak Gate Voltage (t p 10 ms)  
Peak Gate Current (t p 10 ms)  
Peak Gate Power (t p 10 ms)  
Average Gate Power  
I t  
40  
A s  
x
A
Y
WW  
G
= 6, 8 or 10  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
V
5
Volts  
Amp  
Watts  
Watt  
°C  
GM  
GM  
I
1
P
5
0.75  
GM  
P
G(AV)  
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
−40 to +110  
−40 to +150  
8
J
Device  
Package  
Shipping  
T
stg  
°C  
in.-lb.  
MCR310−6  
TO220AB  
500/Box  
500/Box  
THERMAL CHARACTERISTICS  
Characteristic  
MCR310−6G  
TO220AB  
(Pb−Free)  
Symbol  
Max  
2.2  
60  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
θ
JC  
MCR310−8  
TO220AB  
500/Box  
500/Box  
R
θ
JA  
MCR310−8G  
TO220AB  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MCR310−10  
TO220AB  
500/Box  
500/Box  
MCR310−10G  
TO220AB  
(Pb−Free)  
(1) V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 3  
MCR310/D  

MCR310-8G 替代型号

型号 品牌 替代类型 描述 数据表
MCR310-8 ONSEMI

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