Datasheet > MCR264-10

MCR264-10

更新时间： 2024-11-05 20:15:35

品牌	Logo	应用领域
安森美 - ONSEMI		局域网栅栅极
页数	文件大小	规格书
4页	66K
描述
SILICON CONTROLLED RECTIFIER,800V V(DRM),25A I(T),TO-220

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MCR264-10 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.72	最大直流栅极触发电流：	50 mA
最大直流栅极触发电压：	1.5 V	最大维持电流：	60 mA
最大漏电流：	2 mA	通态非重复峰值电流：	450 A
最大通态电压：	2 V	最大通态电流：	25000 A
最高工作温度：	125 °C	最低工作温度：	-40 °C
断态重复峰值电压：	800 V	子类别：	Silicon Controlled Rectifiers
表面贴装：	NO	触发设备类型：	SCR
Base Number Matches：	1

MCR264-10 数据手册

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by MCR264-4/D

SEMICONDUCTOR TECHNICAL DATA

Silicon Controlled Rectifiers

SCRs

40 AMPERES RMS

200 thru 800 VOLTS

. . . designed for back-to-back SCR output devices for solid state relays or applications

requiring high surge operation.

•

Photo Glass Passivated Blocking Junctions for High Temperature Stability,

Center Gate for Uniform Parameters

•

400 Amperes Surge Capability

Blocking Voltage to 800 Volts

CASE 221A-04

(TO-220AB)

STYLE 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Forward and Reverse Blocking Voltage

(T = 25 to 125°C, Gate Open)

DRM

RRM

Volts

MCR264-4

MCR264-6

MCR264-8

MCR264-10

200

400

600

800

Forward Current (T = 80°C)

(All Conduction Angles)

Amps

T(RMS)

T(AV)

Peak Non-repetitive Surge Current – 8.3 ms

400

450

TSM

(1/2 Cycle, Sine Wave)

Forward Peak Gate Power

Forward Average Gate Power

1.5 ms

0.5

Watts

Watt

G(AV)

Forward Peak Gate Current

(300 µs, 120 PPS)

Amps

Operating Junction Temperature Range

Storage Temperature Range

–40 to +125

–40 to +150

°C

stg

1. V

and V

for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate

RRM

DRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when

the device is to be used at high sustained currents.

REV 1

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4

中文翻译

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与MCR264-10相关器件

型号	品牌	获取价格	描述	数据表
MCR264-10-A	MOTOROLA	获取价格	40A, 800V, SCR, TO-220AB
MCR264-10-AC	MOTOROLA	获取价格	40A, 800V, SCR, TO-220AB
MCR264-10-AD	MOTOROLA	获取价格	Silicon Controlled Rectifier, 40A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR264-10-AF	MOTOROLA	获取价格	Silicon Controlled Rectifier, 40A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR264-10-AJ	MOTOROLA	获取价格	40A, 800V, SCR, TO-220AB
MCR264-10-AK	MOTOROLA	获取价格	Silicon Controlled Rectifier, 40A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR264-10-AN	MOTOROLA	获取价格	40A, 800V, SCR, TO-220AB
MCR264-10-AS	MOTOROLA	获取价格	Silicon Controlled Rectifier, 40A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR264-10-BA	MOTOROLA	获取价格	40A, 800V, SCR, TO-220AB
MCR264-10-BC	MOTOROLA	获取价格	40A, 800V, SCR, TO-220AB

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