MCR25N

更新时间： 2024-09-13 22:46:19

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅整流器
页数	文件大小	规格书
8页	197K
描述
SILICON CONTROLLED RECTIFIERS

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中文翻译

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数据手册
替代型号

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MCR25N 数据手册

Preferred Device

Reverse Blocking Thyristors

Designed primarily for half–wave ac control applications, such as

motor controls, heating controls, and power supplies; or wherever

half–wave, silicon gate–controlled devices are needed.

http://onsemi.com

• Blocking Voltage to 800 Volts

• On-State Current Rating of 25 Amperes RMS

• High Surge Current Capability — 300 Amperes

• Rugged, Economical TO–220AB Package

• Glass Passivated Junctions for Reliability and Uniformity

SCRs

25 AMPERES RMS

400 thru 800 VOLTS

• Minimum and Maximum Values of I , V , and I Specified for

GT GT

Ease of Design

• High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C

• Device Marking: Logo, Device Type, e.g., MCR25D, Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Off–State Voltage

Volts

DRM,

(T = –40 to 125°C, Sine Wave, 50 to

RRM

60 Hz, Gate Open)

MCR25D

MCR25M

MCR25N

400

600

800

On-State RMS Current

(180° Conduction Angles; T = 80°C)

T(RMS)

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,

300

TSM

TO–220AB

CASE 221A

STYLE 3

T = 125°C)

Circuit Fusing Consideration

(t = 8.3 ms)

I t

373

20.0

0.5

A sec

PIN ASSIGNMENT

Cathode

Forward Peak Gate Power

(Pulse Width ≤ 1.0 µs, T = 80°C)

Watts

Watt

Anode

Forward Average Gate Power

(t = 8.3 ms, T = 80°C)

G(AV)

Gate

Anode

Forward Peak Gate Current

(Pulse Width ≤ 1.0 µs, T = 80°C)

2.0

Operating Junction Temperature Range

Storage Temperature Range

–40 to

+125

°C

ORDERING INFORMATION

stg

–40 to

+150

°C

Device

MCR25D

MCR25M

MCR25N

Package

TO220AB

Shipping

50 Units/Rail

(1) V

DRM

and V for all types can be applied on a continuous basis. Ratings

RRM

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage

ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 1999

Publication Order Number:

February, 2000 – Rev. 3

MCR25/D

12 3 4 5 6 7 8

中文翻译

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MCR25N 替代型号

型号	品牌	替代类型	描述	数据表
2N6509G	LITTELFUSE	类似代替	该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源消弧电路。功能与特色:
2N6509TG	LITTELFUSE	类似代替	该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源消弧电路。功能与特色:
2N6509	ONSEMI	类似代替	Silicon Controlled Rectifiers

与MCR25N相关器件

型号	品牌	获取价格	描述	数据表
MCR25NG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR25NG	LITTELFUSE	获取价格	该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与调光器；或用于需要半波硅门控
MCR25YRTD100	ROHM	获取价格	Thick Film Chip Resistors
MCR25YRTD1000	ROHM	获取价格	Thick Film Chip Resistors
MCR25YRTD10R0	ROHM	获取价格	Thick Film Chip Resistors
MCR25YRTD1R0	ROHM	获取价格	Thick Film Chip Resistors
MCR25YRTD6200	ROHM	获取价格	Thick Film Chip Resistors
MCR25YRTD9R1	ROHM	获取价格	Thick Film Chip Resistors
MCR25YRTF100	ROHM	获取价格	Thick Film Chip Resistors
MCR25YRTF1000	ROHM	获取价格	Thick Film Chip Resistors

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