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MCR25DG PDF预览

MCR25DG

更新时间： 2024-01-20 11:24:05
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
5页 93K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR25DG 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：2.06
外壳连接：ANODE配置：SINGLE
最大直流栅极触发电流：30 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：25 A断态重复峰值电压：800 V
重复峰值反向电压：800 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SCR
Base Number Matches：1

MCR25DG 数据手册

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MCR25D, MCR25M, MCR25N  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half−wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half−wave, silicon gate−controlled devices are needed.  
http://onsemi.com  
Features  
SCRs  
25 AMPERES RMS  
400 thru 800 VOLTS  
• Blocking Voltage to 800 Volts  
• On-State Current Rating of 25 Amperes RMS  
• High Surge Current Capability − 300 Amperes  
• Rugged, Economical TO−220AB Package  
G
A
K
• Glass Passivated Junctions for Reliability and Uniformity  
• Minimum and Maximum Values of I , V , and I Specified for  
GT GT  
H
MARKING  
DIAGRAM  
Ease of Design  
• High Immunity to dv/dt − 100 V/msec Minimum @ 125°C  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
AY WW  
MCR25xG  
AKA  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
TO−220AB  
CASE 221A−09  
STYLE 3  
(T = −40 to 125°C, Sine Wave,  
J
1
2
50 to 60 Hz, Gate Open)  
MCR25D  
MCR25M  
MCR25N  
400  
600  
800  
3
A
Y
= Assembly Location  
= Year  
On-State RMS Current  
I
25  
A
A
T(RMS)  
(180° Conduction Angles; T = 80°C)  
WW = Work Week  
C
x
G
= D, M, or N  
Peak Non-repetitive Surge Current  
I
300  
TSM  
= Pb−Free Package  
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)  
J
AKA = Diode Polarity  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
373  
A sec  
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
P
20.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
1
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
2
3
4
Anode  
(t = 8.3 ms, T = 80°C)  
C
Gate  
Forward Peak Gate Current  
I
GM  
Anode  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
ORDERING INFORMATION  
T
stg  
Device  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MCR25D  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MCR25DG  
TO−220AB  
(Pb−Free)  
MCR25M  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings  
of the devices are exceeded.  
MCR25MG  
TO−220AB  
(Pb−Free)  
MCR25N  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MCR25NG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 5  
MCR25/D  
 
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中文翻译

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MCR25DG 替代型号

型号 品牌 替代类型 描述 数据表
2N6509G LITTELFUSE

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