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MCR25D PDF预览

MCR25D

更新时间: 2024-11-19 22:46:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
8页 197K
描述
SILICON CONTROLLED RECTIFIERS

MCR25D 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:CASE 221A-09, 3 PIN针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.12Is Samacsys:N
外壳连接:ANODE配置:SINGLE
关态电压最小值的临界上升速率:50 V/us最大直流栅极触发电流:30 mA
最大直流栅极触发电压:1 V最大维持电流:40 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0通态非重复峰值电流:300 A
元件数量:1端子数量:3
最大通态电流:25000 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240认证状态:Not Qualified
最大均方根通态电流:25 A断态重复峰值电压:400 V
重复峰值反向电压:400 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:SCR
Base Number Matches:1

MCR25D 数据手册

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Preferred Device  
Reverse Blocking Thyristors  
Designed primarily for half–wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half–wave, silicon gate–controlled devices are needed.  
http://onsemi.com  
Blocking Voltage to 800 Volts  
On-State Current Rating of 25 Amperes RMS  
High Surge Current Capability — 300 Amperes  
Rugged, Economical TO–220AB Package  
Glass Passivated Junctions for Reliability and Uniformity  
SCRs  
25 AMPERES RMS  
400 thru 800 VOLTS  
Minimum and Maximum Values of I , V , and I Specified for  
GT GT  
H
Ease of Design  
G
High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C  
Device Marking: Logo, Device Type, e.g., MCR25D, Date Code  
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
4
(1)  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(T = –40 to 125°C, Sine Wave, 50 to  
V
RRM  
J
60 Hz, Gate Open)  
MCR25D  
MCR25M  
MCR25N  
400  
600  
800  
On-State RMS Current  
(180° Conduction Angles; T = 80°C)  
I
25  
A
A
T(RMS)  
1
2
C
3
Peak Non-repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz,  
I
300  
TSM  
TO–220AB  
CASE 221A  
STYLE 3  
T
= 125°C)  
J
2
2
Circuit Fusing Consideration  
(t = 8.3 ms)  
I t  
373  
20.0  
0.5  
A sec  
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
(Pulse Width 1.0 µs, T = 80°C)  
P
Watts  
Watt  
A
GM  
1
2
3
4
C
Anode  
Forward Average Gate Power  
(t = 8.3 ms, T = 80°C)  
P
G(AV)  
Gate  
C
Anode  
Forward Peak Gate Current  
(Pulse Width 1.0 µs, T = 80°C)  
I
2.0  
GM  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
40 to  
+125  
°C  
J
ORDERING INFORMATION  
T
stg  
40 to  
+150  
°C  
Device  
MCR25D  
MCR25M  
MCR25N  
Package  
TO220AB  
TO220AB  
TO220AB  
Shipping  
50 Units/Rail  
50 Units/Rail  
50 Units/Rail  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Ratings  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage  
ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
February, 2000 – Rev. 3  
MCR25/D  

MCR25D 替代型号

型号 品牌 替代类型 描述 数据表
2N6507TG LITTELFUSE

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S4025R LITTELFUSE

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