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MCR22-2 PDF预览

MCR22-2

更新时间: 2024-11-19 22:46:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅整流器
页数 文件大小 规格书
6页 104K
描述
Silicon Controlled Rectifiers

MCR22-2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.19
标称电路换相断开时间:40 µs配置:SINGLE
关态电压最小值的临界上升速率:25 V/us最大直流栅极触发电流:0.2 mA
最大直流栅极触发电压:0.8 V最大维持电流:5 mA
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-T3
JESD-609代码:e0最大漏电流:0.2 mA
通态非重复峰值电流:15 A元件数量:1
端子数量:3最大通态电压:1.7 V
最大通态电流:1500 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1.5 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:50 V重复峰值反向电压:50 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

MCR22-2 数据手册

 浏览型号MCR22-2的Datasheet PDF文件第2页浏览型号MCR22-2的Datasheet PDF文件第3页浏览型号MCR22-2的Datasheet PDF文件第4页浏览型号MCR22-2的Datasheet PDF文件第5页浏览型号MCR22-2的Datasheet PDF文件第6页 
Order this document  
by MCR22-2/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed and tested for repetitive peak operation required for CD ignition, fuel  
ignitors, flash circuits, motor controls and low-power switching applications.  
150 Amperes for 2 µs Safe Area  
High dv/dt  
Very Low Forward “On” Voltage at High Current  
Low-Cost TO-226AA (TO-92)  
SCRs  
1.5 AMPERES RMS  
50 thru 600 VOLTS  
G
A
K
K
G
CASE 29-04  
(TO-226AA)  
STYLE 10  
A
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Forward and Reverse Blocking Voltage  
V
V
,
Volts  
DRM  
(R  
= IK, T = 25 to 125°C)  
GK  
J
RRM  
MCR22-2  
MCR22-3  
MCR22-4  
MCR22-6  
MCR22-8  
50  
100  
200  
400  
600  
On-State Current RMS  
(All Conduction Angles)  
I
1.5  
Amps  
Amps  
T(RMS)  
Peak Non-repetitive Surge Current, T = 25°C  
(1/2 Cycle, Sine Wave, 60 Hz)  
I
TSM  
15  
A
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.9  
0.5  
0.1  
0.2  
A s  
Peak Gate Power, T = 25°C  
P
Watt  
Watt  
Amp  
A
GM  
Average Gate Power, T = 25°C  
P
G(AV)  
A
Peak Forward Gate Current, T = 25°C  
I
FGM  
A
(300 µs, 120 PPS)  
Peak Reverse Gate Voltage  
V
5
Volts  
°C  
RGM  
Operating Junction Temperature Range @ Rated V  
Storage Temperature Range  
Lead Solder Temperature  
and V  
T
J
–40 to +125  
–40 to +150  
+230  
RRM  
DRM  
T
°C  
stg  
°C  
(Lead Length  
1/16 from case, 10 s Max)  
for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate  
RRM  
1. V and V  
DRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
Motorola, Inc. 1995  

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