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MCR218FP

更新时间: 2024-11-19 22:46:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅整流器
页数 文件大小 规格书
6页 126K
描述
Silicon Controlled Rectifiers

MCR218FP 数据手册

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Order this document  
by MCR218FP/D  
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Thyristors  
. . . designed primarily for half-wave ac control applications, such as motor controls,  
heating controls and power supply crowbar circuits.  
ISOLATED SCRs  
8 AMPERES RMS  
50 thru 800 VOLTS  
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Blocking Voltage to 800 Volts  
80 A Surge Current Capability  
Insulated Package Simplifies Mounting  
G
CASE 221C-02  
STYLE 2  
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Forward and Reverse Blocking Voltage  
(T = –40 to +125°C, Gate Open)  
J
V
DRM  
V
RRM  
Volts  
MCR218-2FP  
MCR218-4FP  
MCR218-6FP  
MCR218-8FP  
50  
200  
400  
600  
800  
MCR218-10FP  
(2)  
On-State RMS Current (T = +70°C) Full Cycle Sine Wave 50 to 60 Hz  
I
8
Amps  
Amps  
C
T(RMS)  
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +70°C)  
I
80  
C
TSM  
Preceded and followed by rated current  
2
I t  
2
A s  
Circuit Fusing (t = 8.3 ms)  
26  
Peak Gate Power (T = +70°C, Pulse Width = 10 µs)  
P
5
0.5  
Watts  
Watt  
Amps  
Volts  
°C  
C
GM  
Average Gate Power (T = +70°C, t = 8.3 ms)  
P
G(AV)  
C
Peak Gate Current (T = +70°C, Pulse Width = 10 µs)  
I
2
C
GM  
RMS Isolation Voltage (T = 25°C, Relative Humidity  
20%)  
V
1500  
A
(ISO)  
Operating Junction Temperature  
Storage Temperature Range  
T
–40 to +125  
–40 to +125  
J
T
°C  
stg  
1. V  
and V  
for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate  
RRM  
DRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic body.  
C
Motorola, Inc. 1995  

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