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SEMICONDUCTOR TECHNICAL DATA
Reverse Blocking Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
ISOLATED SCRs
8 AMPERES RMS
50 thru 800 VOLTS
•
•
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
•
•
•
Blocking Voltage to 800 Volts
80 A Surge Current Capability
Insulated Package Simplifies Mounting
G
CASE 221C-02
STYLE 2
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Forward and Reverse Blocking Voltage
(T = –40 to +125°C, Gate Open)
J
V
DRM
V
RRM
Volts
MCR218-2FP
MCR218-4FP
MCR218-6FP
MCR218-8FP
50
200
400
600
800
MCR218-10FP
(2)
On-State RMS Current (T = +70°C) Full Cycle Sine Wave 50 to 60 Hz
I
8
Amps
Amps
C
T(RMS)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +70°C)
I
80
C
TSM
Preceded and followed by rated current
2
I t
2
A s
Circuit Fusing (t = 8.3 ms)
26
Peak Gate Power (T = +70°C, Pulse Width = 10 µs)
P
5
0.5
Watts
Watt
Amps
Volts
°C
C
GM
Average Gate Power (T = +70°C, t = 8.3 ms)
P
G(AV)
C
Peak Gate Current (T = +70°C, Pulse Width = 10 µs)
I
2
C
GM
RMS Isolation Voltage (T = 25°C, Relative Humidity
20%)
V
1500
A
(ISO)
Operating Junction Temperature
Storage Temperature Range
T
–40 to +125
–40 to +125
J
T
°C
stg
1. V
and V
for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate
RRM
DRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic body.
C
1
Motorola Thyristor Device Data
Motorola, Inc. 1995