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by MCR16/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
SCRs
16 AMPERES RMS
400 thru 800
VOLTS
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 16 Amperes RMS
High Surge Current Capability — 160 Amperes
Industry Standard TO–220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
A
K
A
G
CASE 221A–06
(TO-220AB)
Style 3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
V
DRM
V
RRM
Volts
(T = –40 to 125°C)
J
MCR16D
MCR16M
MCR16N
400
600
800
On-State RMS Current
(All Conduction Angles)
I
16
A
A
T(RMS)
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, T = 125°C)
I
160
TSM
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
106
5.0
A sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)
P
Watts
Watts
A
C
GM
Average Gate Power (t = 8.3 ms, T = 80°C)
P
0.5
C
G(AV)
Peak Gate Current (Pulse Width ≤ 1.0 µs, T = 80°C)
I
2.0
C
GM
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +125
–40 to +150
°C
J
T
stg
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
R
1.5
62.5
°C/W
°C
θJC
θJA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
(1) andV
T
260
L
V
DRM
foralltypescanbeappliedonacontinuousbasis. Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall
RRM
notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthe
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
1
Motorola Thyristor Device Data
Motorola, Inc. 1995