MCR16

更新时间： 2024-11-04 04:16:23

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅整流器
页数	文件大小	规格书
5页	62K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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数据手册

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MCR16 数据手册

MCR16N

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half−wave ac control applications, such as

motor controls, heating controls, and power supplies; or wherever

half−wave, silicon gate−controlled devices are needed.

http://onsemi.com

Features

SCRs

16 AMPERES RMS

800 VOLTS

• Blocking Voltage to 800 Volts

• On−State Current Rating of 16 Amperes RMS

• High Surge Current Capability − 160 Amperes

• Rugged Economical TO−220AB Package

• Glass Passivated Junctions for Reliability and Uniformity

• Minimum and Maximum Values of I , V , and I Specified for

GT GT

Ease of Design

• High Immunity to dv/dt − 100 V/msec Minimum at 125°C

• Pb−Free Package is Available*

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

AY WW

MCR16NG

AKA

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

MCR16N

800

TO−220AB

CASE 221A−09

STYLE 3

On-State RMS Current

T(RMS)

(180° Conduction Angles; T = 80°C)

Peak Non-repetitive Surge Current

160

TSM

(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)

= Assembly Location

= Year

Circuit Fusing Consideration (t = 8.3 ms)

I t

106

5.0

A sec

WW = Work Week

AKA = Diode Polarity

Forward Peak Gate Power

= Pb−Free Package

(Pulse Width ≤ 1.0 ms, T = 80°C)

Forward Average Gate Power

0.5

2.0

G(AV)

(t = 8.3 ms, T = 80°C)

Forward Peak Gate Current

PIN ASSIGNMENT

Cathode

(Pulse Width ≤ 1.0 ms, T = 80°C)

Operating Junction Temperature Range

Storage Temperature Range

−40 to +125

−40 to +150

°C

Anode

stg

Gate

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Anode

ORDERING INFORMATION

1. V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings

of the devices are exceeded.

Device

Package

Shipping

MCR16N

TO−220AB

50 Units / Rail

MCR16NG

TO−220AB

(Pb−Free)

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 4

MCR16/D

12 3 4 5

中文翻译

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与MCR16相关器件

型号	品牌	获取价格	描述	数据表
MCR16D	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 16000mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme
MCR16D-AF	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB
MCR16D-AJ	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB
MCR16D-AK	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB
MCR16D-AN	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB
MCR16D-AS	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB
MCR16D-AU	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB
MCR16D-BA	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB
MCR16D-BC	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB
MCR16D-BD	MOTOROLA	获取价格	16A, 400V, SCR, TO-220AB

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