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MCR12DCN

更新时间： 2024-09-14 22:46:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅整流器
页数 文件大小 规格书
6页 106K
描述
Silicon Controlled Rectifiers

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中文翻译

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MCR12DCN 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.88关态电压最小值的临界上升速率：50 V/us
最大直流栅极触发电流：20 mA最大直流栅极触发电压：1 V
最大维持电流：40 mAJESD-609代码：e0
最大漏电流：0.01 mA通态非重复峰值电流：100 A
最大通态电压：2.1 V最大通态电流：12000 A
最高工作温度：125 °C最低工作温度：-40 °C
断态重复峰值电压：800 V子类别：Silicon Controlled Rectifiers
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
触发设备类型：SCRBase Number Matches：1

MCR12DCN 数据手册

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Order this document  
by MCR12DCM/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Devices  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer applications  
such as motor control; process control; temperature, light and speed control.  
•
•
•
•
Small Size  
SCRs  
12 AMPERES RMS  
600 thru 800 VOLTS  
Passivated Die for Reliability and Uniformity  
Low Level Triggering and Holding Characteristics  
A
K
Available in Two Package Styles  
Surface Mount Lead Form — Case 369A  
Miniature Plastic Package — Straight Leads — Case 369  
A
G
ORDERING INFORMATION  
•
K
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)  
Shipped in Sleeves — No Suffix, i.e. MCR12DCN  
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,  
i.e. MCR12DCNT4  
G
A
CASE 369A–13  
STYLE 4  
•
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —  
Add “–1” Suffix to Device Number, i.e. MCR12DCN–1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off–State Voltage  
Peak Repetitive Reverse Voltage  
(T = –40 to 125°C)  
J
V
DRM  
V
RRM  
Volts  
MCR12DCM  
MCR12DCN  
600  
800  
On–State RMS Current  
(All Conduction Angles; T = 90°C)  
I
T(RMS)  
Amps  
12  
C
Average On–State Current (All Conduction Angles; T = 90°C)  
I
7.6  
C
T(AV)  
Peak Non–Repetitive Surge Current  
I
TSM  
(One Half Cycle, 60 Hz, T = 125°C)  
100  
41  
J
2
I t  
2
Circuit Fusing Consideration (t = 8.3 msec)  
A sec  
Peak Gate Power  
(Pulse Width ≤ 10 sec, T = 90°C)  
P
GM  
Watts  
5.0  
C
Average Gate Power  
P
G(AV)  
(t = 8.3 msec, T = 90°C)  
0.5  
C
Peak Gate Current (Pulse Width ≤ 10 sec, T = 90°C)  
I
2.0  
Amps  
C
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
Characteristic  
T
J
–40 to 125  
–40 to 150  
°C  
T
stg  
Symbol  
Max  
Unit  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
R
2.2  
88  
80  
°C/W  
JC  
JA  
JA  
(2)  
Thermal Resistance — Junction to Ambient  
Maximum Lead Temperature for Soldering Purposes  
(1) V  
(3)  
T
260  
°C  
L
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be  
DRM  
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the  
voltage ratings of the device are exceeded.  
(2) Surface mounted on minimum recommended pad size.  
(3) 1/8″ from case for 10 seconds.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  
123456

中文翻译

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