MCR12DCN

更新时间： 2024-11-04 04:16:23

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅整流器
页数	文件大小	规格书
5页	64K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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数据手册

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MCR12DCN 数据手册

MCR12DCM, MCR12DCN

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

http://onsemi.com

Features

SCRs

12 AMPERES RMS

600 − 800 VOLTS

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

(T = −40 to 125°C, Sine Wave, 50 to 60 Hz,

RRM

Gate Open)

MCR12DCM

MCR12DCN

600

800

DPAK

CASE 369C

STYLE 4

On−State RMS Current

7.8

100

T(RMS)

(180° Conduction Angles; T = 90°C)

Average On−State Current

T(AV)

MARKING DIAGRAM

(180° Conduction Angles; T = 90°C)

Peak Non-Repetitive Surge Current

TSM

(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)

YWW

Circuit Fusing Consideration (t = 8.3 msec)

I t

A sec

2DCxG

Forward Peak Gate Power

5.0

(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)

Forward Average Gate Power

G(AV)

0.5

2.0

= Year

= Work Week

R12DCx = Device Code

x= M or N

(t = 8.3 msec, T = 90°C)

Forward Peak Gate Current

(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)

= Pb−Free Package

Operating Junction Temperature Range

Storage Temperature Range

−40 to 125

−40 to 150

°C

stg

PIN ASSIGNMENT

Cathode

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Anode

Gate

1. V

for all types can be applied on a continuous basis. Ratings apply for zero

DRM

or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested

with a constant current source such that the voltage ratings of the device are

exceeded.

Anode

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

February, 2006 − Rev. 5

MCR12DCM/D

12 3 4 5

中文翻译

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与MCR12DCN相关器件

型号	品牌	获取价格	描述	数据表
MCR12DCNT4	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DCNT4G	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DCNT4G	LITTELFUSE	获取价格	该硅控整流器专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光线和
MCR12D-DW	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR12DG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DG	LITTELFUSE	获取价格	该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源；或用于需要半波硅门控设
MCR12DSM	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSM	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR12DSM1	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12000mA I(T), 600V V(DRM)
MCR12DSMT4	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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