Datasheet > MCR100-8

MCR100-8

更新时间： 2024-11-21 18:09:31

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描述
Silicon Controlled Rectifiers

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中文翻译

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数据手册

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MCR100-8 数据手册

Thyristor

DIP Type

Silicon Controlled Rectifiers

MCR100-8

Unit: mm

TO-92

+0.25

–0.15

4.58

■ Features

● Blocking voltage to 600V

● RMS on-state current to 0.8 A

● General purpose switching

0.46 ±0.10

+0.10

1.27TYP

0.38

–0.05

[1.27 ±0.20

]

[1.27 ±0.20]

3.60 ±0.20

1₁.C_.BA_asT_eHODE

2₂.G_.EA_mT_ittE_er

(R2.29)

3₃.A_.coN_llO_ecD_torE

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

VDRM

and

VRRM

Peak Repetitive Forward and Reverse Blocking Voltage

(TJ = 25 to 125℃, RGK = 1 K Ω)

600

Forward Current RMS

IT(RMS)

ITSM

0.8

Peak Forward Surge Current, TA = 25℃

(1/2 Cycle, Sine Wave, 60 Hz)

I²t

PGM

A²s

Circuit Fusing Considerations (t = 8.3 ms)

Peak Gate Power ─ Forward, TA = 25℃

Average Gate Power ─ Forward, TA = 25℃

0.415

0.1

0.01

PGF(AV)

IGFM

VGRM

RθJA

RθJC

Peak Gate Current ─ Forward, TA = 25℃ (300 ms, 120 PPS)

Peak Gate Voltage ─ Reverse

200

℃/W

℃

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Operating Junction Temperature Range @ Rated VRRM and VDRM

-40 to +125

-40 to +150

230

Tstg

℃

Storage Temperature Range

℃

Lead Solder Temperature(＜1/16"from case, 10 s max)

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