Datasheet > MCQD05N06HE3

MCQD05N06HE3

更新时间： 2024-04-09 19:01:28

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	1323K
描述
Tape&Reel:4Kpcs/Reel;

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MCQD05N06HE3 数据手册

MCQD05N06HE3

Features

•

AEC-Q101 Qualified

Trench MOSFET Technology

High Density Cell Design For Low R_DS(ON)

Moisture Sensitivity Level 1

Halogen Free. “Green” Device^{(Note 1)}

Dual N-Channel

Epoxy Meets UL 94 V-0 Flammability Rating

Power MOSFET

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

SOP-8

Thermal Resistance: 78°C/W Junction to Ambient ^{(Note 2)}

Parameter

Rating

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

V_GS

±20

T_A=25°C

I_D

Continuous Drain Current

Pulsed Drain Current ^{(Note 3)}

T_A=100°C

3.1

I_DM

P_D

Total Power Dissipation ^{(Note 4)}

1.6

Single Pulsed Avalanche Energy ^{(Note 5)}

E_AS

Note:

1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

2. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz.

DIMENSIONS

INCHES

DIM

NOTE

Copper, in a still air environment with T_A=25°C.

MIN MAX MIN MAX

0.053 0.069 1.35 1.75

0.004 0.010 0.10 0.25

0.053 0.061 1.35 1.55

0.013 0.020 0.33 0.51

0.007 0.010 0.17 0.25

0.185 0.200 4.70 5.10

3. Repetitive rating; pulse width limited by max. junction temperature.

4. P_Dis based on max. junction temperature, using junction-ambient thermal resistance.

5. T_J=25ǔ, V_DD=40V, V_GS=10V, R_G=25Ω,L=0.5mH.

0.050

1.270

TYP.

0.228 0.244 5.80 6.20

0.150 0.157 3.80 4.00

0.016 0.050 0.40 1.27

Internal Structure and Marking Code

0°

8°

0°

8°

Suggested Solder Pad Layout

4.61mm

QD05N06

6.50mm

YYWW

4 codes in total

YY is the year

WW is the week

1.50mm

0.80mm

1.27mm

Rev.4-1-01102024

1/6

MCCSEMI.COM

12 3 4 5 6

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