MCP609T-ISL

更新时间： 2024-11-26 12:18:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		运算放大器
页数	文件大小	规格书
32页	480K
描述
2.5V to 6.0V Micropower CMOS Op Amp

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中文翻译

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数据手册

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MCP609T-ISL 数据手册

MCP606/7/8/9

2.5V to 6.0V Micropower CMOS Op Amp

Description

Features

The MCP606/7/8/9 family of operational amplifiers (op

amps) from Microchip Technology Inc. are unity-gain

stable with low offset voltage (250 µV, maximum).

Performance characteristics include rail-to-rail output

swing capability and low input bias current (80 pA at

+85°C, maximum). These features make this family of

op amps well suited for single-supply, precision,

high-impedance, battery-powered applications.

• Low Input Offset Voltage: 250 µV (maximum)

• Rail-to-Rail Output

• Low Input Bias Current: 80 pA (maximum at

+85°C)

• Low Quiescent Current: 25 µA (maximum)

• Power Supply Voltage: 2.5V to 6.0V

• Unity-Gain Stable

• Chip Select (CS) Capability: MCP608

• Industrial Temperature Range: -40°C to +85°C

• No Phase Reversal

The single is available in standard 8-lead PDIP, SOIC

and TSSOP packages, as well as in a SOT-23-5

package. The single MCP608 with Chip Select (CS) is

offered in the standard 8-lead PDIP, SOIC and TSSOP

packages. The dual MCP607 is offered in the standard

8-lead PDIP, SOIC and TSSOP packages. Finally, the

quad MCP609 is offered in the standard 14-lead PDIP,

SOIC and TSSOP packages. All devices are fully

specified from -40°C to +85°C, with power supplies

from 2.5V to 6.0V.

• Available in Single, Dual and Quad Packages

Typical Applications

• Battery Power Instruments

• High-Impedance Applications

• Strain Gauges

• Medical Instruments

• Test Equipment

Package Types

MCP606

PDIP, SOIC,TSSOP

MCP606

SOT-23-5

Design Aids

NC 1

V_OUT

V_SS

V_IN+

V_DD

• SPICE Macro Models

• FilterLab^®Software

V_IN–

V_IN+

V_SS

V_DD

V_OUT

V_IN–

• Mindi™ Circuit Designer & Simulator

• Analog Demonstration and Evaluation Boards

• Application Notes

5 NC

MCP607

PDIP, SOIC,TSSOP

MCP608

PDIP, SOIC,TSSOP

Typical Application

V_OUTA

NC 1

V_DD

V_INA

–

V_OUTBV_IN–

V_DD

V_OUT

V_OUT= V_LM+ I R

(R ⁄ R_G)

SEN

I_L

V_INB

–

V_IN+

V_SS

5 V_INB

5 NC

V_SS

R_F

R_G

To Load

(V_LP

)

50 kΩ

MCP609

PDIP, SOIC,TSSOP

5 kΩ

2.5V

6.0V

V_OUTA

V_OUTD

V_OUT

V_INA

–

V_IND

–

MCP606

R_SEN

10Ω

To Load

11 V_SS

(V_LM

)

V_DD

V_INB

–

V_INC

–

Low-Side Battery Current Sensor

8 V_OUTC

V_OUTB

DS11177E-page 1

12 3 4 5 6 7...32

中文翻译

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