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MCM69T618TQ5R PDF预览

MCM69T618TQ5R

更新时间: 2024-09-29 22:20:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 存储内存集成电路静态存储器信息通信管理
页数 文件大小 规格书
10页 182K
描述
64K x 18 Bit Synchronous Pipelined Cache Tag RAM

MCM69T618TQ5R 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.56
Is Samacsys:NJESD-30 代码:R-PQFP-G100
长度:20 mm内存密度:1179648 bit
内存集成电路类型:CACHE TAG SRAM内存宽度:18
功能数量:1端口数量:1
端子数量:100字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:110 °C最低工作温度:20 °C
组织:64KX18输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:BICMOS温度等级:OTHER
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

MCM69T618TQ5R 数据手册

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Order this document  
by MCM69T618/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM69T618  
64K x 18 Bit Synchronous  
Pipelined Cache Tag RAM  
The MCM69T618 is a 1M–bit synchronous fast static RAM with integrated tag  
compare function. It is designed to address tag RAM for 512KB, 1MB, or 2MB  
secondary cache as well as to be used as a data RAM for 512KB caches. This  
device is organized as 64K words of 18 bits each. It integrates input registers,  
output registers, tag comparators, and high speed SRAM onto a single mono-  
lithic circuit for reduced parts count in cache tag RAM applications. Synchronous  
design allows precise cycle control with the use of an external clock (K). BiCMOS  
circuitry reduces the overall power consumption of the integrated functions for  
greater reliability.  
TQ PACKAGE  
TQFP  
CASE 983A–01  
Addresses (SA), data inputs (DQ), write enable (SW), and chip enable (SE0  
and SE1) are all controlled through positive–edge–triggered noninverting reg-  
isters. Data enable (DE) is sampled on the rising clock edge while output enable  
(G) and match output enable (MG) are asynchronous.  
Write cycles are internally self–timed and initiated by the rising edge of the  
clock (K) input. This feature eliminates complex off–chip write pulse generation  
and provides increased timing flexibility for incoming signals.  
For read cycles, pipelined SRAM output data is temporarily stored by an  
edge–triggeredoutput register and then released to the output buffers at the next  
rising edge of clock (K).  
Compare cycles begin as read cycles with output disabled, so compare data  
can be loaded into the input register. The comparator compares the read data  
with the registered input data, and a match signal is generated. The match output  
is also stored by an output register and released to the match output buffer at the  
next rising edge of clock (K).  
The MCM69T618 operates from a single 3.3 V power supply and all inputs and  
outputs are LVTTL compatible.  
MCM69T618–5 = 5 ns Clock–to–Match / 10 ns cycle  
Single 3.3 V + 10%, – 5% Power Supply  
Pipelined Data Comparator  
Pipelined Chip Enable and Write Enable for Data (DQ) Output Enable Path  
64K x 18 Organization Supports Up to 2MB Cache  
Synchronous Data Input Register Load Enable (DE)  
Internally Self–Timed Write Cycle  
Asynchronous Data I/O Output Enable (G)  
Asynchronous Match Output Enable (MG)  
100–Pin TQFP Package  
REV 5  
12/23/97  
Motorola, Inc. 1997  

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