Datasheet > 存储 > SRAM> MCM69Q618TQ8

MCM69Q618TQ8

更新时间： 2024-01-04 08:49:31

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		存储内存集成电路静态存储器
页数	文件大小	规格书
12页	182K
描述
64K x 18 Bit Synchronous Separate I/O SRAM

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中文翻译

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技术参数
数据手册

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MCM69Q618TQ8 技术参数

生命周期：	Obsolete	包装说明：	LQFP,
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
最长访问时间：	8 ns	其他特性：	SELF TIMED WRITE
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存密度：	1179648 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	18	功能数量：	1
端口数量：	1	端子数量：	100
字数：	65536 words	字数代码：	64000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	64KX18
输出特性：	3-STATE	可输出：	YES
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大供电电压 (Vsup)：	3.465 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	MOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
宽度：	14 mm	Base Number Matches：	1

MCM69Q618TQ8 数据手册

Order this document

by MCM69Q618/D

SEMICONDUCTOR TECHNICAL DATA

MCM69Q618

Advance Information

64K x 18 Bit Synchronous

Separate I/O Fast SRAM

The Motorola MCM69Q618 is a 1 Megabit static random access memory, organized

as 64K words of 18 bits. It features separate data input and data output buffers and

incorporates input and output registers on board with high speed SRAM.

The MCM69Q618 allows the user to perform transparent write and data pass

through. Two data bus ports are provided – a data input (D) and a data output (Q) port.

The synchronous design allows for precise cycle control with the use of an external

single clock (K). Address port, data input (D0 – D17), data output (Q0 – Q17), write en-

able (W), chip enables (E1, E2), and pass–through enable (PT) are registered on the

rising edge of clock (K).

TQ PACKAGE

100 PIN TQFP

CASE 983A–01

Any given cycle operates on only one address. However, for any cycle, reads and

writes can be intermixed. Thus, one can perform a read, a write, or a combination read/

write during any one cycle. For a combination read/write, the contents of the array are

read before the new data is written.

By using the pass–through function, the output port Q can be made to reflect either

the contents of the array or the data presented to the input port D. For read/write or a

read cycle with G low, the Q port will output the contents of the array. However, if PT

is asserted, the Q port will instead output the data presented at the D input port.

•

Single 3.3 V ± 5% Power Supply

Fast Access Times: 6/8/10 ns Max

Sustained Throughput of 1.49 Gigabits/Second

Single Clock Operation

Address, Data Input, E1, E2, PT, W, and Data Output Registers on Chip

83 MHz Maximum Clock Cycle Time

Self Timed Write

Separate Data Input and Data Output Pins

Pass–Through Feature

Asynchronous Output Enable (G)

LVTTL Compatible I/O

No Dead Cycles Required for Reads after Writes or for Writes after Reads

100 Pin TQFP Package

Simultaneous Reads and Writes

Suggested Applications

— ATM

— Ethernet Switches — Routers

— Cell/Frame Buffers — SNA Switches

— Shared Memory

Product Family Configurations

Part

Number

Dual

Address

Single

Address

Dual

I/O

Separate

I/O

MCM69D536

Note 1

Note 2

MCM69D618

MCM69Q536

MCM69Q618

MCM67Q709

MCM67Q909

NOTES:

1. Tie AX and AY address ports together for the part to function as a single address part.

2. Tie GX high for DQX to be inputs and tie WY high and GY low for DQY to be outputs.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 5

11/24/97

Motorola, Inc. 1997

MOTOROLA FAST SRAM

MCM69Q618

12 3 4 5 6 7...12

中文翻译

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与MCM69Q618TQ8相关器件

型号	品牌	获取价格	描述	数据表
MCM69Q618TQ8R	MOTOROLA	获取价格	64K x 18 Bit Synchronous Separate I/O SRAM
MCM69R536ZP4.4	MOTOROLA	获取价格	Late-Write SRAM, 32KX36, 2.2ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-1
MCM69R536ZP5	NXP	获取价格	32KX36 LATE-WRITE SRAM, 2.5ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R536ZP5R	MOTOROLA	获取价格	Late-Write SRAM, 32KX36, 2.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-1
MCM69R536ZP6R	MOTOROLA	获取价格	32KX36 LATE-WRITE SRAM, 3ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R536ZP7R	MOTOROLA	获取价格	Late-Write SRAM, 32KX36, 3.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-1
MCM69R537ZP5	MOTOROLA	获取价格	32KX36 CACHE SRAM, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R537ZP5R	MOTOROLA	获取价格	32KX36 CACHE SRAM, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R537ZP6	MOTOROLA	获取价格	32KX36 CACHE SRAM, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R537ZP6R	MOTOROLA	获取价格	32KX36 CACHE SRAM, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119

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