Datasheet > MCM63Z919TQ8.5R

MCM63Z919TQ8.5R

更新时间： 2024-11-20 14:43:31

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		静态存储器内存集成电路
页数	文件大小	规格书
32页	358K
描述
512KX18 ZBT SRAM, 8.5ns, PQFP100, TQFP-100

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MCM63Z919TQ8.5R 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	LQFP,
针数：	100	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.92	Is Samacsys：	N
最长访问时间：	8.5 ns	JESD-30 代码：	R-PQFP-G100
JESD-609代码：	e0	长度：	20 mm
内存密度：	9437184 bit	内存集成电路类型：	ZBT SRAM
内存宽度：	18	功能数量：	1
端子数量：	100	字数：	524288 words
字数代码：	512000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	512KX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大供电电压 (Vsup)：	3.465 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

MCM63Z919TQ8.5R 数据手册

Order this document

by MCM63Z837/D

SEMICONDUCTOR TECHNICAL DATA

MCM63Z837

MCM63Z919

Advance Information

256K x 36 and 512K x 18 Bit

Flow–Through ZBT RAM

Synchronous Fast Static RAM

The ZBT RAM is an 8M–bit synchronous fast static RAM designed to provide

Zero Bus Turnaround . The ZBT RAM allows 100% use of bus cycles during

back–to–back read/write and write/read cycles. The MCM63Z837 (organized as

256K words by 36 bits) and the MCM63Z919 (organized as 512K words by 18

bits) are fabricated in Motorola’s high performance silicon gate CMOS

technology. This device integrates input registers, a 2–bit address counter, and

high speed SRAM onto a single monolithic circuit for reduced parts count in

communication applications. Synchronous design allows precise cycle control

with the use of an external clock (CK). CMOS circuitry reduces the overall power

consumption of the integrated functions for greater reliability.

TQ PACKAGE

TQFP

CASE 983A–01

ZP PACKAGE

PBGA

CASE 999–02

Addresses (SA), data inputs (DQ), and all control signals except output enable

(G), sleep mode (ZZ), and linear burst order (LBO) are clock (CK) controlled

through positive–edge–triggered noninverting registers.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (CK) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

•

3.3 V LVTTL and LVCMOS Compatible

MCM63Z837/918–7.0 = 7 ns Access/8.5 ns Cycle (117 MHz)

MCM63Z837/918–7.5 = 7.5 ns Access/10 ns Cycle (100 MHz)

MCM63Z837/918–8 = 8 ns Access/10.5 ns Cycle (95 MHz)

MCM63Z837/918–8.5 = 8.5 ns Access/11 ns Cycle (90 MHz)

MCM63Z837/918–10 = 10 ns Access/15 ns Cycle (66 MHz)

Selectable Burst Sequencing Order (Linear/Interleaved)

Internally Self–Timed Write Cycle

Sleep Mode (ZZ)

Single–Cycle Deselect

Byte Write Control

ADV Controlled Burst

•

IEEE 1149–1 Sample Only JTAG

100–Pin TQFP and 119–Bump PBGA Packages

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by

Micron Technology, Inc. and Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 1

6/3/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

MCM63Z837•MCM63Z919

12 3 4 5 6 7...32

中文翻译

下载PDF

与MCM63Z919TQ8.5R相关器件

型号	品牌	获取价格	描述	数据表
MCM63Z919ZP10	MOTOROLA	获取价格	ZBT SRAM, 512KX18, 10ns, CMOS, PBGA119, PLASTIC, BGA-119
MCM63Z919ZP7.0	MOTOROLA	获取价格	512KX18 ZBT SRAM, 7ns, PBGA119, PLASTIC, BGA-119
MCM63Z919ZP7.0R	MOTOROLA	获取价格	512KX18 ZBT SRAM, 7ns, PBGA119, PLASTIC, BGA-119
MCM63Z919ZP7.5	MOTOROLA	获取价格	512KX18 ZBT SRAM, 7.5ns, PBGA119, PLASTIC, BGA-119
MCM63Z919ZP7.5R	MOTOROLA	获取价格	512KX18 ZBT SRAM, 7.5ns, PBGA119, PLASTIC, BGA-119
MCM63Z919ZP8.5	MOTOROLA	获取价格	512KX18 ZBT SRAM, 8.5ns, PBGA119, PLASTIC, BGA-119
MCM63Z919ZP8R	MOTOROLA	获取价格	512KX18 ZBT SRAM, 8ns, PBGA119, PLASTIC, BGA-119
MCM63Z936TQ8	MOTOROLA	获取价格	ZBT SRAM, 512KX36, 8ns, CMOS, PQFP100, TQFP-100
MCM63Z936TQ8R	MOTOROLA	获取价格	ZBT SRAM, 512KX36, 8ns, CMOS, PQFP100, TQFP-100
MCM63Z936ZP7R	MOTOROLA	获取价格	ZBT SRAM, 512KX36, 7ns, CMOS, PBGA119, PLASTIC, BGA-119

与MCM63Z919TQ8.5R相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM63Z919TQ8.5R

MCM63Z919TQ8.5R 技术参数

MCM63Z919TQ8.5R 数据手册

与MCM63Z919TQ8.5R相关器件

与MCM63Z919TQ8.5R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM63Z919TQ8.5R

MCM63Z919TQ8.5R 技术参数

MCM63Z919TQ8.5R 数据手册

与MCM63Z919TQ8.5R相关器件

与MCM63Z919TQ8.5R相关文章

您还可以找

您在本页遇到什么问题？