Datasheet > MCM63Z916TQ10R

MCM63Z916TQ10R

更新时间： 2024-11-28 20:22:39

品牌	Logo	应用领域
恩智浦 - NXP		静态存储器内存集成电路
页数	文件大小	规格书
35页	734K
描述
512KX18 ZBT SRAM, 10ns, PQFP100, TQFP-100

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MCM63Z916TQ10R 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	QFP	包装说明：	TQFP-100
针数：	100	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.53	Is Samacsys：	N
最长访问时间：	10 ns	其他特性：	FLOW-THROUGH OR PIPELINED ARCHTECTURE
I/O 类型：	COMMON	JESD-30 代码：	R-PQFP-G100
长度：	20 mm	内存密度：	9437184 bit
内存集成电路类型：	ZBT SRAM	内存宽度：	18
功能数量：	1	端子数量：	100
字数：	524288 words	字数代码：	512000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	512KX18
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装等效代码：	QFP100,.63X.87
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	电源：	2.5/3.3,3.3 V
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最小待机电流：	3.14 V	子类别：	SRAMs
最大供电电压 (Vsup)：	3.465 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	宽度：	14 mm
Base Number Matches：	1

MCM63Z916TQ10R 数据手册

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

Order this document

by MCM63Z834/D

MCM63Z834

MCM63Z916

Product Preview

256K x 36 and 512K x 18 Bit

ZBTr Fast Static RAM

The ZBT RAM is an 8M–bit synchronous fast static RAM designed to provide

Zero Bus Turnaroundr. The ZBT RAM allows 100% use of bus cycles during

back–to–back read/write and write/read cycles. The MCM63Z834 (organized as

256K words by 36 bits) and the MCM63Z916 (organized as 512K words by 18

bits) are fabricated in Motorola’s high performance silicon gate CMOS tech-

nology. This device integrates input registers, an output register, a 2–bit address

counter, and high speed SRAM onto a single monolithic circuit for reduced parts

count in communication applications. Synchronous design allows precise cycle

control with the use of an external positive–edge–triggered clock (CK). CMOS

circuitry reduces the overall power consumption of the integrated functions for

greater reliability.

TQ PACKAGE

TQFP

CASE 983A–01

ZP PACKAGE

PBGA

CASE 999–02

Addresses (SA), data inputs (DQ), and all control signals except output enable

(G) and linear burst order (LBO) are clock (CK) controlled through positive–

edge–triggered noninverting registers.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (CK) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals. Write data is

supplied to the memory one cycle after the write sequence initiation for the flow–

throughdevice, andtwocyclesafterthewritesequenceinitiationforthepipelined

device.

For flow–through read cycles, the SRAM allows output data to simply flow freely from the memory

array. For pipelined read cycles, the SRAM output data is temporarily stored by an edge–triggered

output register and then released to the output buffers at the next rising edge of clock (CK).

The MCM63Z834 and MCM63Z916 operate from a 3.3 V core power supply and all outputs oper-

ate on a 2.5 V or 3.3 V power supply. All inputs and outputs are JEDEC Standard JESD8–A and

JESD8–5 compatible.

•

3.3 V ±5% Core Power Supply, 2.5 V or 3.3 V I/O Supply

MCM63Z834/916–10 = 10 ns Flow–Through Access/4 ns Pipelined Access (143 MHz)

MCM63Z834/916–11 = 11 ns Flow–Through Access/4.2 ns Pipelined Access (133 MHz)

MCM63Z834/916–15 = 15 ns Flow–Through Access/5 ns Pipelined Access (100 MHz)

Selectable Read/Write Functionality (Flow–Through/Pipelined)

Selectable Burst Sequencing Order (Linear/Interleaved)

Internally Self–Timed Write Cycle

Two–Cycle Deselect (Pipelined)

Byte Write Control

ADV Controlled Burst

Simplified JTAG

•

100–Pin TQFP and 119–Bump PBGA Packages

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by

Micron Technology, Inc. and Motorola, Inc.

This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.

REV 2

1/10/00

Motorola, Inc. 2000

MOTOROLA FAST SRAM

MCM63Z834•MCM63Z916

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...35

中文翻译

下载PDF

与MCM63Z916TQ10R相关器件

型号	品牌	获取价格	描述	数据表
MCM63Z916TQ11	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit ZBT Fast Static RAM
MCM63Z916TQ11R	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit ZBT Fast Static RAM
MCM63Z916TQ11R	NXP	获取价格	512KX18 ZBT SRAM, 11ns, PQFP100, TQFP-100
MCM63Z916TQ15	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit ZBT Fast Static RAM
MCM63Z916TQ15	NXP	获取价格	512KX18 ZBT SRAM, 15ns, PQFP100, TQFP-100
MCM63Z916TQ15R	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit ZBT Fast Static RAM
MCM63Z916TQ15R	NXP	获取价格	512KX18 ZBT SRAM, 15ns, PQFP100, TQFP-100
MCM63Z916ZP10	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit ZBT Fast Static RAM
MCM63Z916ZP10	NXP	获取价格	512KX18 ZBT SRAM, 10ns, PBGA119, PLASTIC, BGA-119
MCM63Z916ZP10R	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit ZBT Fast Static RAM

与MCM63Z916TQ10R相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

65
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM63Z916TQ10R

MCM63Z916TQ10R 技术参数

MCM63Z916TQ10R 数据手册

与MCM63Z916TQ10R相关器件

与MCM63Z916TQ10R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM63Z916TQ10R

MCM63Z916TQ10R 技术参数

MCM63Z916TQ10R 数据手册

与MCM63Z916TQ10R相关器件

与MCM63Z916TQ10R相关文章

您还可以找

您在本页遇到什么问题？