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MCM63Z916TQ10R PDF预览

MCM63Z916TQ10R

更新时间: 2024-11-28 11:57:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 内存集成电路静态存储器
页数 文件大小 规格书
35页 738K
描述
256K x 36 and 512K x 18 Bit ZBT Fast Static RAM

MCM63Z916TQ10R 数据手册

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Freescale Semiconductor, Inc.  
SEMICONDUCTOR TECHNICAL DATA  
MOTOROLA  
Order this document  
by MCM63Z834/D  
MCM63Z834  
MCM63Z916  
Product Preview  
256K x 36 and 512K x 18 Bit  
ZBTr Fast Static RAM  
The ZBT RAM is an 8M–bit synchronous fast static RAM designed to provide  
Zero Bus Turnaroundr. The ZBT RAM allows 100% use of bus cycles during  
back–to–back read/write and write/read cycles. The MCM63Z834 (organized as  
256K words by 36 bits) and the MCM63Z916 (organized as 512K words by 18  
bits) are fabricated in Motorola’s high performance silicon gate CMOS tech-  
nology. This device integrates input registers, an output register, a 2–bit address  
counter, and high speed SRAM onto a single monolithic circuit for reduced parts  
count in communication applications. Synchronous design allows precise cycle  
control with the use of an external positive–edge–triggered clock (CK). CMOS  
circuitry reduces the overall power consumption of the integrated functions for  
greater reliability.  
TQ PACKAGE  
TQFP  
CASE 983A–01  
ZP PACKAGE  
PBGA  
CASE 999–02  
Addresses (SA), data inputs (DQ), and all control signals except output enable  
(G) and linear burst order (LBO) are clock (CK) controlled through positive–  
edge–triggered noninverting registers.  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (CK) input. This feature eliminates complex off–chip write pulse generation  
and provides increased timing flexibility for incoming signals. Write data is  
supplied to the memory one cycle after the write sequence initiation for the flow–  
throughdevice, andtwocyclesafterthewritesequenceinitiationforthepipelined  
device.  
For flow–through read cycles, the SRAM allows output data to simply flow freely from the memory  
array. For pipelined read cycles, the SRAM output data is temporarily stored by an edge–triggered  
output register and then released to the output buffers at the next rising edge of clock (CK).  
The MCM63Z834 and MCM63Z916 operate from a 3.3 V core power supply and all outputs oper-  
ate on a 2.5 V or 3.3 V power supply. All inputs and outputs are JEDEC Standard JESD8–A and  
JESD8–5 compatible.  
3.3 V ±5% Core Power Supply, 2.5 V or 3.3 V I/O Supply  
MCM63Z834/916–10 = 10 ns Flow–Through Access/4 ns Pipelined Access (143 MHz)  
MCM63Z834/916–11 = 11 ns Flow–Through Access/4.2 ns Pipelined Access (133 MHz)  
MCM63Z834/916–15 = 15 ns Flow–Through Access/5 ns Pipelined Access (100 MHz)  
Selectable Read/Write Functionality (Flow–Through/Pipelined)  
Selectable Burst Sequencing Order (Linear/Interleaved)  
Internally Self–Timed Write Cycle  
Two–Cycle Deselect (Pipelined)  
Byte Write Control  
ADV Controlled Burst  
Simplified JTAG  
100–Pin TQFP and 119–Bump PBGA Packages  
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by  
Micron Technology, Inc. and Motorola, Inc.  
This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.  
REV 2  
1/10/00  
Motorola, Inc. 2000  
For More Information On This Product,  
Go to: www.freescale.com  

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