Datasheet > MCD417

MCD417

更新时间： 2024-11-04 12:26:47

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
3页	259K
描述
P-Channel 32-V (D-S) MOSFET High performance trench technology

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MCD417 数据手册

Freescale

AOD417/MCD417

P-Channel 32-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

59 @ V_GS= -10V

95 @ V_GS= -4.5V

-32

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

DPAK saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

V_DS

V_GS

I_D

-32

Gate-Source Voltage

±25

Continuous Drain Current^a

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_A=25^oC

±40

-30

I_DM

I_S

^oC

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 175

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^a

Maximum Junction-to-Case

Symbol

Maximum Units

^oC/W

R_θJA

^oC/W

3.0

R_θJC

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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