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MCC312-18IO1 PDF预览

MCC312-18IO1

更新时间: 2024-11-01 20:15:43
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网栅极
页数 文件大小 规格书
6页 252K
描述
Silicon Controlled Rectifier, 520A I(T)RMS, 320000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element,

MCC312-18IO1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X7Reach Compliance Code:compliant
风险等级:5.74其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大直流栅极触发电流:150 mA最大直流栅极触发电压:2 V
快速连接描述:2G-2GR螺丝端子的描述:A-K-AK
最大维持电流:150 mAJESD-30 代码:R-XUFM-X7
最大漏电流:40 mA通态非重复峰值电流:9800 A
元件数量:2端子数量:7
最大通态电流:320000 A最高工作温度:140 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:520 A断态重复峰值电压:1800 V
重复峰值反向电压:1800 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

MCC312-18IO1 数据手册

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MCC312-18io1  
=
VRRM  
ITAV  
VT  
2x1800V  
320A  
Thyristor Module  
=
=
1.06V  
Phase leg  
Part number  
MCC312-18io1  
Backside: isolated  
3
1
2
6
7
5
4
Y1  
Features / Advantages:  
Applications:  
Package:  
International standard package  
Direct copper bonded Al2O3-ceramic  
with copper base plate  
Planar passivated chip  
Keyed gate/cathode twin pins  
Motor control, softstarter  
Power converter  
Heat and temperature control for  
industrial furnaces and chemical  
processes  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
Soldering pins for PCB mounting  
Base plate: Copper  
internally DCB isolated  
V~  
3600  
Lighting control  
Solid state switches  
Advanced power cycling  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191210f  
© 2019 IXYS all rights reserved  

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