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MCC250-16IO1 PDF预览

MCC250-16IO1

更新时间: 2024-11-17 22:46:19
品牌 Logo 应用领域
IXYS 栅极触发装置可控硅整流器二极管局域网
页数 文件大小 规格书
4页 142K
描述
Thyristor Modules Thyristor/Diode Modules

MCC250-16IO1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:MODULE-7针数:7
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.79Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大直流栅极触发电流:150 mA
最大直流栅极触发电压:3 V快速连接描述:2G-2GR
螺丝端子的描述:A-K-AK最大维持电流:150 mA
JESD-30 代码:R-XUFM-X7最大漏电流:40 mA
通态非重复峰值电流:9600 A元件数量:2
端子数量:7最大通态电流:450000 A
最高工作温度:140 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:450 A
断态重复峰值电压:1600 V重复峰值反向电压:1600 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

MCC250-16IO1 数据手册

 浏览型号MCC250-16IO1的Datasheet PDF文件第2页浏览型号MCC250-16IO1的Datasheet PDF文件第3页浏览型号MCC250-16IO1的Datasheet PDF文件第4页 
MCC 250  
MCD 250  
ITRMS = 2x450 A  
ITAVM = 2x287 A  
VRRM = 800-1800 V  
Thyristor Modules  
Thyristor/Diode Modules  
3
VRSM  
VDSM  
VRRM  
VDRM  
Type  
7
2
6
5
4
1
V
V
Version 1  
Version 1  
900  
1300  
1500  
1700  
1900  
800  
1200  
1400  
1600  
1800  
MCC 250-08io1  
MCC 250-12io1  
MCC 250-14io1  
MCC 250-16io1  
MCC 250-18io1  
MCD 250-08io1  
MCD 250-12io1  
MCD 250-14io1  
MCD 250-16io1  
MCD 250-18io1  
3
3
6 7 1  
5 4 2  
Symbol  
Conditions  
Maximum Ratings  
ITRMS, IFRMS  
TVJ = TVJM  
TC = 85°C; 180° sine  
450  
287  
A
A
I
TAVM, IFAVM  
MCC  
MCD  
ITSM, IFSM  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
9000  
9600  
A
A
1
5 4 2  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
7800  
8500  
A
A
i2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
405 000  
380 000  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
304 000  
300 000  
A2s  
A2s  
Features  
• International standard package  
• Direct copper bonded Al2O3 -ceramic  
base plate  
• Planar passivated chips  
• Isolation voltage 3600 V~  
• UL registered, E 72873  
• Keyed gate/cathode twin pins  
(di/dt)cr  
TVJ = TVJM  
;
repetitive, IT = 860 A  
100  
A/µs  
f = 50 Hz; tP = 200 µs  
VD = 2/3 VDRM  
IG = 1 A;  
diG/dt = 1 A/µs  
non repetitive, IT = 290 A  
VDR = 2/3 VDRM  
800  
A/µs  
V/µs  
(dv/dt)cr  
PGM  
TVJ = TVJM  
;
1000  
RGK = ; method 1 (linear voltage rise)  
TVJ = TVJM  
IT = ITAVM  
;
tP = 30 µs  
tP = 500 µs  
120  
60  
W
W
Applications  
;
• Motor control  
• Power converter  
• Heat and temperature control for  
industrial furnaces and chemical  
processes  
PGAV  
VRGM  
20  
10  
W
V
TVJ  
TVJM  
Tstg  
-40...+140  
140  
-40...+125  
°C  
°C  
°C  
• Lighting control  
• Contactless switches  
VISOL  
50/60 Hz, RMS;  
IISOL 1 mA;  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Advantages  
• Space and weight savings  
• Simple mounting  
Md  
Mounting torque (M5)  
Terminal connection torque (M8)  
2.5-5/22-44 Nm/lb.in.  
12-15/106-132 Nm/lb.in.  
• Improvedtemperatureandpowercycling  
• Reduced protection circuits  
Weight  
Typical including screws  
320  
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2004 IXYS All rights reserved  
1 - 4  

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