是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.62 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 32 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 180 |
JESD-30 代码: | R-PDSO-G3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1036-R | MCC | PNP Silicon Epitaxial Transistors |
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2SA1036-R-TP | MCC | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC |
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2SA1036-R-TP-HF | MCC | Small Signal Bipolar Transistor, |
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2SA1037 | ROHM | General Purpose Transistor |
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2SA1037 | LRC | General Purpose Transistors(PNP Silicon) |
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2SA1037 | TYSEMI | Excellent hFE linearity. PNP silicon transistor Collector-base voltage VCBO -60 V |
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