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2N6036 PDF预览

2N6036

更新时间: 2024-01-03 17:07:28
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
4页 642K
描述
PNP Darlington Power Transistor

2N6036 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:2 weeks风险等级:0.87
Samacsys Description:ON SEMICONDUCTOR - 2N6036G - TRANSISTOR, PNP, -80V, -4A, TO-225最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):100JEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):25 MHz

2N6036 数据手册

 浏览型号2N6036的Datasheet PDF文件第2页浏览型号2N6036的Datasheet PDF文件第3页浏览型号2N6036的Datasheet PDF文件第4页 
M C C  
TM  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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Micro Commercial Components  
2N6036  
Features  
·
This device is designed for general purpose amplifier and low-speed  
switching applications.  
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
PNP Darlington  
Power Transistor  
·
·
·
Marking:2N6036  
TO-126  
Maximum Ratings*  
K
A
N
Symbol  
Rating  
Rating  
80  
80  
Unit  
V
V
VCEO  
VCBO  
VEBO  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
D
5.0  
V
Collector Current, Continuous  
Peak  
Base Current  
Operating Junction Temperature  
Storage Temperature  
4.0  
8.0  
100  
IC  
A
E
M
B
IB  
TJ  
TSTG  
mA  
OC  
OC  
-55 to +150  
-55 to +150  
Thermal Characteristics  
1
2
3
Symbol  
Rating  
Max  
40  
0.32  
Unit  
W
L
PD  
Total Device Dissipation  
Derate above 25OC  
G
W/OC  
PD  
Total Device Dissipation  
Derate above 25OC  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.5  
0.012  
3.12  
83.3  
W
W/OC  
RJC  
RJA  
OC/W  
OC/W  
C
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
F
Q
OFF CHARACTERISTICS  
VCEO(sus)  
Collector-Emitter Breakdown Voltage (1)  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
J
(I =100mAdc, IE=0)  
C
80  
---  
---  
Vdc  
I
Collector Cutoff Current  
DIMENSIONS  
CEO  
(VCB=60Vdc, I =0)  
100  
uAdc  
E
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢇꢇꢆ  
ꢇꢀꢁꢆ  
ICEX  
Collector Cutoff Current  
ꢈꢀꢇꢆ  
ꢇꢉꢊꢆ  
ꢇꢉꢊꢆ  
ꢁꢋꢌꢄꢆ  
ꢉꢆ  
0.291  
0.417  
0.602  
ꢎꢏꢐꢑ4  
0.118  
0.026  
0.046  
0.090TYP  
0.098  
0.083  
0.000  
0.043  
0.307ꢆ  
0.433  
0.618  
ꢎꢏꢐꢒ1  
0.126  
0.034  
0.054  
7.40  
10.60  
15.30  
3.90  
3.00  
0.66  
1.17  
2.290TYP  
2.50  
7.80  
11.00  
15.70  
4.10  
3.20  
0.86  
1.37  
(VCE=80Vdc, VEB(off)=1.5Vdc)  
(VCE=80Vdc, VEB(off)=1.5Vdc, TC=125 OC)  
Collector-Cutoff Current  
---  
---  
100  
500  
uA  
mA  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ICBO  
IEBO  
(VCB=80Vdc, I =0)  
---  
---  
0.5  
2.0  
mAdc  
mAdc  
E
Emitter Cutoff Current  
(VEB=5.0Vdc, I =0)  
ꢕꢆ  
C
ꢖꢆ  
0.114  
2.90  
*Indicates JEDEC Registered Data  
L
M
N
0.091  
0.012  
0.059  
2.10  
0.00  
1.10  
2.30  
0.30  
1.50  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
Q
0.018  
0.024  
0.45  
0.60  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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