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2N2222 PDF预览

2N2222

更新时间: 2024-01-12 12:06:19
品牌 Logo 应用领域
美微科 - MCC 晶体开关晶体管
页数 文件大小 规格书
3页 238K
描述
NPN Switching Transistors

2N2222 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.61最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JEDEC-95代码:MO-041BB
JESD-30 代码:R-CDSO-N6元件数量:2
端子数量:6封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

2N2222 数据手册

 浏览型号2N2222的Datasheet PDF文件第2页浏览型号2N2222的Datasheet PDF文件第3页 
M C C  
2N2222  
2N2222A  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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TM  
Micro Commercial Components  
Features  
High current (max.800mA)  
Low voltage (max.40V)  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
NPN Switching  
Transistors  
Maximum Ratings  
Symbol  
Rating  
Rating  
Unit  
VCEO  
VCBO  
VEBO  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
TO-18  
2N2222  
2N2222A  
30  
40  
V
2N2222  
2N2222A  
60  
75  
V
V
2N2222  
2N2222A  
5.0  
6.0  
IC  
ICM  
IBM  
TJ  
Collector Current (DC)  
Peak Collector Current  
Peak Base Current  
Operating Junction Temperature  
Storage Temperature  
800  
800  
200  
mA  
mA  
mA  
OC  
-55 to +150  
-55 to +150  
TSTG  
OC  
Thermal Characteristics  
Symbol  
Rating  
Max  
Unit  
Total power Dissipation  
TA!25R  
TC!25R  
Ptot  
500  
1.2  
mW  
W
RJC  
RJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
146  
350  
K/W  
K/W  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector cut-off current  
(VCB=50Vdc, IE=0)  
(VCB=50Vdc, IE=0,TA=150R)  
(VCB=60Vdc, IE=0)  
(VCB=60Vdc, IE=0,TA=150R)  
2N2222  
---  
---  
---  
---  
---  
10  
10  
10  
10  
10  
nAdc  
uAdc  
nAdc  
uAdc  
nAdc  
ICBO  
2N2222A  
DIMENSIONS  
INCHES  
MM  
Emitter Cut-off current  
(IC=0, VEB=3Vdc)  
DIM  
A
B
C
D
E
MIN  
MAX  
.230  
.195  
.210  
----  
MIN  
MAX  
NOTE  
Φ
IEBO  
.209  
.178  
.170  
.50  
5.309 5.842  
4.521 4.953  
4.318 5.334  
DC Current Gain  
Φ
(IC=0.1mAdc, VCE=10Vdc)  
(IC=1.0mAdc, VCE=10Vdc)  
(IC=10mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=1.0Vdc)*  
(IC=150mAdc, VCE=10Vdc)*  
DC Current Gain  
35  
50  
75  
50  
100  
hFE  
12.7  
----  
.100  
2.54  
.7112 1.219  
----- 1.27  
0.229 0.787  
44° 46°  
ΦTYP  
F
.028  
-----  
.009  
44°  
.048  
.050  
.031  
46°  
300  
G
H
J
hFE  
(IC=500mAdc, VCE=10Vdc) *  
2N2222  
2N2222A  
30  
40  
---  
---  
K
L
.036  
.016  
.046  
.021  
0.914 1.168  
0.406 0.533  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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