MCAC100N03Y
Features
•
•
•
•
•
•
Split Gate Trench MOSFET Technology
Low Thermal Resistance
Moisture Sensitivity Level 1
Halogen Free. “Green” Device (Note 1)
N-CHANNEL
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
MOSFET
Maximum Ratings
•
•
•
Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Thermal Resistance: 50°C/W Junction to Ambient(Steady-State) (Note 2)
•
Thermal Resistance: 1.2°C/W Junction to Case
DFN5060
Parameter
Rating
30
Symbol
VDS
Unit
V
Drain-Source Voltage
Gate-Source Volltage
VGS
±20
100
63
V
D
H
TC=25℃
B
ID
A
Continuous Drain Current
Pulsed Drain Current(Note 3)
A
N
TC=100℃
•
PIN 1
G
C
IDM
PD
400
104
270
A
W
J
Total Power Dissipation(Note 4)
E
Single Pulsed Avalanche Energy(Note 5)
EAS
mJ
F
Note:
K
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
M
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
L
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based
on RθJA t≤10s and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user's specific board design.
3. Repetitive rating; pulse width limited by max. junction temperature.
4. Pd is based on max. junction temperature, using junction-case thermal resistance.
5. VDD=50V, RG=25Ω, L=1.5mH.
DIMENSIONS
MM
MIN MAX MIN MAX
0.031 0.047 0.80 1.20
INCHES
DIM
NOTE
TYP.
A
B
C
D
E
F
G
H
K
J
0.010
0.254
0.193 0.222 4.90 5.64
0.232 0.250 5.90 6.35
0.148 0.167 3.75 4.25
0.126 0.154 3.20 3.92
0.189 0.213 4.80 5.40
0.222 0.239 5.65 6.06
0.045 0.059 1.15 1.50
0.012 0.020 0.30 0.50
0.046 0.054 1.17 1.37
0.012 0.028 0.30 0.71
0.016 0.028 0.40 0.71
Internal Structure and Marking Code
8
7
6
5
D
D
D
D
8
7
6
5
MCC
MCAC100N03Y
L
M
N
1
2
3
4
S
S
S
G
1
2
3
4
Rev.4-1-06022023
1/6
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