是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SOP, SOP16,.25 | 针数: | 16 |
Reach Compliance Code: | compliant | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 1 week | 风险等级: | 5.25 |
模拟集成电路 - 其他类型: | SINGLE-ENDED MULTIPLEXER | JESD-30 代码: | R-PDSO-G16 |
JESD-609代码: | e3 | 长度: | 9.9 mm |
湿度敏感等级: | 1 | 负电源电压最大值(Vsup): | -6 V |
负电源电压最小值(Vsup): | 标称负供电电压 (Vsup): | -3 V | |
信道数量: | 8 | 功能数量: | 1 |
端子数量: | 16 | 标称断态隔离度: | 70 dB |
通态电阻匹配规范: | 15 Ω | 最大通态电阻 (Ron): | 37 Ω |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP16,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 子类别: | Multiplexer or Switches |
最大供电电压 (Vsup): | 6 V | 最小供电电压 (Vsup): | 2.5 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
最长断开时间: | 28 ns | 最长接通时间: | 28 ns |
切换: | BREAK-BEFORE-MAKE | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 3.9 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MC74LVXT4051DR2 | ONSEMI |
获取价格 |
Analog Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS | |
MC74LVXT4051DR2G | ONSEMI |
获取价格 |
Analog Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS | |
MC74LVXT4051DT | ONSEMI |
获取价格 |
Analog Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS | |
MC74LVXT4051DTG | ONSEMI |
获取价格 |
Analog Multiplexer Demultiplexer | |
MC74LVXT4051DTR2 | ONSEMI |
获取价格 |
Analog Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS | |
MC74LVXT4051DTR2G | ONSEMI |
获取价格 |
Analog Multiplexer Demultiplexer | |
MC74LVXT4051DTRG | ONSEMI |
获取价格 |
Analog Multiplexer Demultiplexer | |
MC74LVXT4051M | ONSEMI |
获取价格 |
Analog Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS | |
MC74LVXT4051MEL | ONSEMI |
获取价格 |
Analog Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS | |
MC74LVXT4051MELG | ONSEMI |
获取价格 |
Analog Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS |