是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOIC | 包装说明: | SOP, SOP14,.25 |
针数: | 14 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 1 week | 风险等级: | 0.82 |
Samacsys Description: | NULL | 系列: | HC/UH |
JESD-30 代码: | R-PDSO-G14 | JESD-609代码: | e3 |
长度: | 8.65 mm | 负载电容(CL): | 50 pF |
逻辑集成电路类型: | INVERTER | 最大I(ol): | 0.004 A |
湿度敏感等级: | 1 | 功能数量: | 6 |
输入次数: | 1 | 端子数量: | 14 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP14,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 包装方法: | RAIL |
峰值回流温度(摄氏度): | 260 | 电源: | 2/6 V |
Prop。Delay @ Nom-Sup: | 21 ns | 传播延迟(tpd): | 105 ns |
认证状态: | Not Qualified | 施密特触发器: | NO |
座面最大高度: | 1.75 mm | 子类别: | Gates |
最大供电电压 (Vsup): | 6 V | 最小供电电压 (Vsup): | 2 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 3.9 mm |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
74HCU04DR2G | ONSEMI |
完全替代 |
Hex Unbuffered Inverter | |
MC74HCU04ADR2G | ONSEMI |
类似代替 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04ADR2 | ONSEMI |
类似代替 |
Hex Unbuffered Inverter |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MC74HCU04ADR2 | ONSEMI |
获取价格 |
Hex Unbuffered Inverter | |
MC74HCU04ADR2G | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04ADT | MOTOROLA |
获取价格 |
Hex Unbuffered Inverter | |
MC74HCU04ADT | ONSEMI |
获取价格 |
Hex Unbuffered Inverter | |
MC74HCU04ADTEL | ONSEMI |
获取价格 |
IC,LOGIC GATE,HEX INVERTER,HC-CMOS,TSSOP,14PIN,PLASTIC | |
MC74HCU04ADTR2 | ONSEMI |
获取价格 |
Hex Unbuffered Inverter | |
MC74HCU04ADTR2G | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04AFEL | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04AFELG | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04AN | MOTOROLA |
获取价格 |
Hex Unbuffered Inverter |