是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | SOIC-14 |
针数: | 14 | Reach Compliance Code: | not_compliant |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 1 week |
风险等级: | 7.11 | Is Samacsys: | N |
系列: | HC/UH | JESD-30 代码: | R-PDSO-G14 |
JESD-609代码: | e0 | 长度: | 8.65 mm |
负载电容(CL): | 50 pF | 逻辑集成电路类型: | INVERTER |
最大I(ol): | 0.005 A | 湿度敏感等级: | 1 |
功能数量: | 6 | 输入次数: | 1 |
端子数量: | 14 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP14,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
包装方法: | RAIL | 峰值回流温度(摄氏度): | 240 |
电源: | 2/6 V | Prop。Delay @ Nom-Sup: | 21 ns |
传播延迟(tpd): | 105 ns | 认证状态: | Not Qualified |
施密特触发器: | NO | 座面最大高度: | 1.75 mm |
子类别: | Gates | 最大供电电压 (Vsup): | 6 V |
最小供电电压 (Vsup): | 2 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 3.9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MM74HCU04M | ONSEMI |
类似代替 |
六路逆变器 | |
MC74HCU04ADR2G | ONSEMI |
类似代替 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04ADG | ONSEMI |
类似代替 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MC74HCU04ADG | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04ADR2 | ONSEMI |
获取价格 |
Hex Unbuffered Inverter | |
MC74HCU04ADR2G | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04ADT | MOTOROLA |
获取价格 |
Hex Unbuffered Inverter | |
MC74HCU04ADT | ONSEMI |
获取价格 |
Hex Unbuffered Inverter | |
MC74HCU04ADTEL | ONSEMI |
获取价格 |
IC,LOGIC GATE,HEX INVERTER,HC-CMOS,TSSOP,14PIN,PLASTIC | |
MC74HCU04ADTR2 | ONSEMI |
获取价格 |
Hex Unbuffered Inverter | |
MC74HCU04ADTR2G | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04AFEL | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS | |
MC74HCU04AFELG | ONSEMI |
获取价格 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS |