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MC74HC365ADR2G PDF预览

MC74HC365ADR2G

更新时间: 2024-11-28 11:07:55
品牌 Logo 应用领域
安森美 - ONSEMI 总线驱动器总线收发器逻辑集成电路光电二极管
页数 文件大小 规格书
8页 151K
描述
Hex 3-State Noninverting Buffer with Common Enables

MC74HC365ADR2G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:LEAD FREE, SOIC-16针数:16
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:1.29
Is Samacsys:N控制类型:ENABLE LOW
系列:HC/UHJESD-30 代码:R-PDSO-G16
JESD-609代码:e3长度:9.9 mm
负载电容(CL):50 pF逻辑集成电路类型:BUS DRIVER
最大I(ol):0.006 A湿度敏感等级:1
位数:1功能数量:6
端口数量:2端子数量:16
最高工作温度:125 °C最低工作温度:-55 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/6 V
Prop。Delay @ Nom-Sup:36 ns传播延迟(tpd):120 ns
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Bus Driver/Transceivers最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

MC74HC365ADR2G 数据手册

 浏览型号MC74HC365ADR2G的Datasheet PDF文件第2页浏览型号MC74HC365ADR2G的Datasheet PDF文件第3页浏览型号MC74HC365ADR2G的Datasheet PDF文件第4页浏览型号MC74HC365ADR2G的Datasheet PDF文件第5页浏览型号MC74HC365ADR2G的Datasheet PDF文件第6页浏览型号MC74HC365ADR2G的Datasheet PDF文件第7页 
MC74HC365A  
Hex 3-State Noninverting  
Buffer with Common  
Enables  
HighPerformance SiliconGate CMOS  
http://onsemi.com  
MARKING  
The MC74HC365A is identical in pinout to the LS365. The device  
inputs are compatible with standard CMOS outputs; with pullup  
resistors, they are compatible with LSTTL outputs.  
DIAGRAMS  
This device is a highspeed hex buffer with 3state outputs and two  
common activelow Output Enables. When either of the enables is  
high, the buffer outputs are placed into highimpedance states. The  
HC365A has noninverting outputs.  
16  
PDIP16  
N SUFFIX  
CASE 648  
MC74HC365AN  
AWLYYWWG  
16  
16  
1
1
Features  
Output Drive Capability: 15 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V  
16  
SOIC16  
D SUFFIX  
CASE 751B  
HC365AG  
AWLYWW  
Low Input Current: 1.0 mA  
1
1
High Noise Immunity Characteristic of CMOS Devices  
In Compliance with the Requirements Defined by JEDEC Standard  
16  
No. 7A  
TSSOP16  
DT SUFFIX  
CASE 948F  
HC  
365A  
ALYWG  
G
Chip Complexity: 90 FETs or 22.5 Equivalent Gates  
These are PbFree Devices*  
16  
1
1
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
= Year  
WW, W = Work Week  
G or G  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
December, 2009 Rev. 2  
MC74HC365A/D  

MC74HC365ADR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC74HC365ADG ONSEMI

完全替代

Hex 3-State Noninverting Buffer with Common Enables
MC74HC365ADTR2G ONSEMI

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Hex 3-State Noninverting Buffer with Common Enables
SN74HC365DT TI

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