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MC74HC126ADR2G PDF预览

MC74HC126ADR2G

更新时间: 2024-11-24 12:19:11
品牌 Logo 应用领域
安森美 - ONSEMI 总线驱动器总线收发器逻辑集成电路光电二极管
页数 文件大小 规格书
8页 148K
描述
Quad 3-State Noninverting Buffers

MC74HC126ADR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP14,.25针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:0.49
控制类型:ENABLE HIGH系列:HC/UH
JESD-30 代码:R-PDSO-G14JESD-609代码:e3
长度:8.65 mm负载电容(CL):50 pF
逻辑集成电路类型:BUS DRIVER最大I(ol):0.006 A
湿度敏感等级:1位数:1
功能数量:4端口数量:2
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:2/6 VProp。Delay @ Nom-Sup:27 ns
传播延迟(tpd):135 ns认证状态:Not Qualified
座面最大高度:1.75 mm子类别:Bus Driver/Transceivers
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
Base Number Matches:1

MC74HC126ADR2G 数据手册

 浏览型号MC74HC126ADR2G的Datasheet PDF文件第2页浏览型号MC74HC126ADR2G的Datasheet PDF文件第3页浏览型号MC74HC126ADR2G的Datasheet PDF文件第4页浏览型号MC74HC126ADR2G的Datasheet PDF文件第5页浏览型号MC74HC126ADR2G的Datasheet PDF文件第6页浏览型号MC74HC126ADR2G的Datasheet PDF文件第7页 
MC74HC125A,  
MC74HC126A  
Quad 3-State Noninverting  
Buffers  
HighPerformance SiliconGate CMOS  
http://onsemi.com  
MARKING  
The MC74HC125A and MC74HC126A are identical in pinout to  
the LS125 and LS126. The device inputs are compatible with standard  
CMOS outputs; with pullup resistors, they are compatible with  
LSTTL outputs.  
DIAGRAMS  
14  
The HC125A and HC126A noninverting buffers are designed to be  
used with 3state memory address drivers, clock drivers, and other  
busoriented systems. The devices have four separate output enables  
that are activelow (HC125A) or activehigh (HC126A).  
PDIP14  
N SUFFIX  
CASE 646  
MC74HC12xAN  
AWLYYWWG  
14  
1
1
14  
Features  
SOIC14  
D SUFFIX  
CASE 751A  
Output Drive Capability: 15 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V  
HC12xAG  
AWLYWW  
14  
1
1
Low Input Current: 1.0 mA  
14  
High Noise Immunity Characteristic of CMOS Devices  
In Compliance with the JEDEC Standard No. 7 A Requirements  
Chip Complexity: 72 FETs or 18 Equivalent Gates  
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
HC  
12xA  
ALYWG  
G
TSSOP14  
DT SUFFIX  
CASE 948G  
14  
1
1
x
A
L, WL  
Y, YY  
= 5, 6  
= Assembly Location  
= Wafer Lot  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
= Year  
W, WW = Work Week  
G or G  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 Rev. 14  
MC74HC125A/D  

MC74HC126ADR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC74HC126ADG ONSEMI

完全替代

Quad 3-State Noninverting Buffers
MM74HC126MX ONSEMI

类似代替

3 态四路缓冲器
MM74HC126M ONSEMI

类似代替

3 态四路缓冲器

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