Datasheet > MC6800

MC6800

更新时间： 2024-09-25 12:26:43

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	454K
描述
N-Channel 30-V (D-S) MOSFET High performance trench technology

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MC6800 数据手册

Freescale

AO6800 /MC6800

N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

3.5

3.0

63 @ V_GS= 4.5V

110 @ V_GS= 2.5V

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

TSOP-6 saves board space

Fast switching speed

High performance trench technology

•

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

V_GS

Limit

±12

3.5

2.8

1.25

1.3

0.8

Units

Drain-Source Voltage

Gate-Source Voltage

T_A=25^oC

T_A=70^oC

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJA

Maximum Units

^oC/W

t <= 10 sec

Steady-State

100

166

Maximum Junction-to-Ambient^a

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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