AO6602 /MC6602
Freescale
N & P-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
3.7
0.063 @ VGS = 10V
0.090 @ VGS = 4.5V
0.112 @ VGS = -10V
0.172 @ VGS = -4.5V
30
3.1
-2.7
-2.2
-30
computers, printers, PCMCIA cards,
cellular and cordless telephones.
TSOP-6
D1
S2
Top View
•
•
Low rDS(on) provides higher efficiency and
extends battery life
G2
G1
S2
G2
1
2
3
6
5
4
D1
S1
D2
G1
Low thermal impedance copper leadframe
TSOP-6 saves board space
S1
D2
P-Channel MOSFET
N-Channel MOSFET
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
3.7
-30
V
±20
TA=25oC
TA=70oC
-2.7
-2.1
-8
Continuous Drain Currenta
ID
A
2.9
8
Pulsed Drain Currentb
IDM
IS
Continuous Source Current (Diode Conduction)a
TA=25oC
-1.05
1.05
A
1.15
Power Dissipationa
PD
W
TA=70oC
0.7
oC
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Unit
Typ
93
Max
110
Typ
93
Max
110
t <= 10 sec
Maximum Junction-to-Ambienta
oC/W
RthJA
Steady State
130
150
130
150
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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