Datasheet > MC6415

MC6415

更新时间： 2022-04-12 11:26:49

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描述
P-Channel 20-V (D-S) MOSFET High performance trench technology

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MC6415 数据手册

Freescale

AO6415/MC6415

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

-2.9

90 @ V_GS= -4.5V

130 @ V_GS= -2.5V

150 @ V_GS= -1.8V

-20

-2.5

-2.3

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

TSOP-6 saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

±12

T_A=25^oC

T_A=70^oC

-2.9

-2.4

±16

-1.0

2.0

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

I_DM

I_S

T_A=25^oC

T_A=70^oC

P_D

1.3

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Units

Maximum

^oC/W

62.5

Maximum Junction-to-Ambient^a

t <= 5 sec

R_θJA

110

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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