生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SOP, | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.1 |
放大器类型: | OPERATIONAL AMPLIFIER | 最大平均偏置电流 (IIB): | 0.5 µA |
标称共模抑制比: | 90 dB | 最大输入失调电压: | 6000 µV |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.92 mm | 负供电电压上限: | -18 V |
标称负供电电压 (Vsup): | -15 V | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 75 °C |
最低工作温度: | -20 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
座面最大高度: | 1.96 mm | 标称压摆率: | 4 V/us |
子类别: | Operational Amplifier | 供电电压上限: | 18 V |
标称供电电压 (Vsup): | 15 V | 表面贴装: | YES |
技术: | BIPOLAR | 温度等级: | COMMERCIAL EXTENDED |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
标称均一增益带宽: | 10000 kHz | 宽度: | 3.95 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MC-4564DC726EF-A10 | RENESAS |
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MEMORY MODULE,SDRAM,64MX72,CMOS,DIMM,168PIN,PLASTIC | |
MC-4564DC726EF-A80 | NEC |
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Synchronous DRAM Module, 64MX72, 6ns, MOS, DIMM-168 | |
MC-4564EC726 | NEC |
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64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE | |
MC-4564EC726EFB-A10 | NEC |
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64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE | |
MC-4564EC726EFB-A80 | NEC |
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64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE | |
MC-4564EC726PFB-A10 | NEC |
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64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE | |
MC-4564EC726PFB-A80 | NEC |
获取价格 |
64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE | |
MC-4564EC727 | NEC |
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64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE | |
MC-4564EC727EF-A75 | NEC |
获取价格 |
64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE | |
MC-4564EC727PF-A75 | NEC |
获取价格 |
64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |