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MC33179DR2G PDF预览

MC33179DR2G

更新时间: 2024-11-23 11:48:39
品牌 Logo 应用领域
安森美 - ONSEMI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
19页 279K
描述
Low Power, Low Noise Operational Amplifiers

MC33179DR2G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:LEAD FREE, SOIC-14针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:0.93Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.6 µA25C 时的最大偏置电流 (IIB):0.5 µA
标称共模抑制比:110 dB频率补偿:YES
最大输入失调电压:4000 µVJESD-30 代码:R-PDSO-G14
JESD-609代码:e3长度:8.65 mm
低-失调:NO微功率:YES
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:4
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:+-2.5/+-15 V认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:1.2 V/us
标称压摆率:2 V/us子类别:Operational Amplifiers
最大压摆率:2.6 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40标称均一增益带宽:3000 kHz
最小电压增益:25000宽度:3.9 mm
Base Number Matches:1

MC33179DR2G 数据手册

 浏览型号MC33179DR2G的Datasheet PDF文件第2页浏览型号MC33179DR2G的Datasheet PDF文件第3页浏览型号MC33179DR2G的Datasheet PDF文件第4页浏览型号MC33179DR2G的Datasheet PDF文件第5页浏览型号MC33179DR2G的Datasheet PDF文件第6页浏览型号MC33179DR2G的Datasheet PDF文件第7页 
MC33178, MC33179  
Low Power, Low Noise  
Operational Amplifiers  
The MC33178/9 series is a family of high quality monolithic  
amplifiers employing Bipolar technology with innovative high  
performance concepts for quality audio and data signal processing  
applications. This device family incorporates the use of high  
frequency PNP input transistors to produce amplifiers exhibiting low  
input offset voltage, noise and distortion. In addition, the amplifier  
provides high output current drive capability while consuming only  
420 mA of drain current per amplifier. The NPN output stage used,  
exhibits no deadband crossover distortion, large output voltage swing,  
excellent phase and gain margins, low openloop high frequency  
output impedance, symmetrical source and sink AC frequency  
performance.  
http://onsemi.com  
DUAL  
PDIP8  
P SUFFIX  
CASE 626  
8
1
The MC33178/9 family offers both dual and quad amplifier  
versions in several package options.  
SOIC8  
D SUFFIX  
CASE 751  
8
1
Features  
600 W Output Drive Capability  
Large Output Voltage Swing  
Micro8  
DM SUFFIX  
8
Low Offset Voltage: 0.15 mV (Mean)  
Low T.C. of Input Offset Voltage: 2.0 mV/°C  
Low Total Harmonic Distortion: 0.0024%  
(@ 1.0 kHz w/600 W Load)  
CASE 846A  
1
QUAD  
High Gain Bandwidth: 5.0 MHz  
High Slew Rate: 2.0 V/ms  
Dual Supply Operation: ±2.0 V to ±18 V  
ESD Clamps on the Inputs Increase Ruggedness without Affecting  
Device Performance  
PDIP14  
P SUFFIX  
CASE 646  
14  
1
PbFree Packages are Available  
SOIC14  
D SUFFIX  
CASE 751A  
14  
1
V
CC  
TSSOP14  
14  
DTB SUFFIX  
CASE 948G  
I
ref  
I
ref  
1
C
V
in  
+
C
V
in  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
V
O
C
M
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 4 of this data sheet.  
V
EE  
Figure 1. Representative Schematic Diagram  
(Each Amplifier)  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 Rev. 7  
MC33178/D  

MC33179DR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC33179DG ONSEMI

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MC33179DR2 ONSEMI

完全替代

Low Power, Low Noise Operational Amplifiers
MC33079DR2G ONSEMI

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Low Noise Dual/Quad Operational Amplifiers

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