Datasheet > MC33169

MC33169

更新时间： 2024-09-28 22:54:59

品牌	Logo	应用领域
安森美 - ONSEMI		电阻器放大器温度传感功率放大器 PC
页数	文件大小	规格书
10页	192K
描述
GaAs POWER AMPLIFIER SUPPORT IC

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MC33169 数据手册

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GaAs POWER AMPLIFIER

SUPPORT IC

The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs

used in hand–held telephones such as GSM and PCS. This device provides

negative voltages for full depletion of Enhanced MESFETs as well as a

priority management system of drain switching, ensuring that the negative

voltage is always present before turning “on” the Power Amplifier. Additional

features include an idle mode input and a direct drive of the N–Channel drain

switch transistor. This product is available in a 4.0 V version intended for

control of the RF Power Amplifier in GSM, DCS1800 and PCS applications.

SEMICONDUCTOR

TECHNICAL DATA

• Negative Regulated Output for Full Depletion of GaAs MESFETs

• Drain Switch Priority Management Circuit

• CMOS Compatible Inputs

• Idle Mode Input (Standby Mode) for Very Low Current Consumption

• Output Signal Directly Drives N–Channel FET

• Low Startup and Operating Current

DTB SUFFIX

PLASTIC PACKAGE

CASE 948G

(TSSOP–14)

PIN CONNECTIONS

Simplified Block Diagram

C2 Input

C1/C2

13 Idle Mode Input

Double

Battery

(2.7 to 7.0 V)

–

C1 Input

Double

Triple

Output

MMSF4N01HD

Generator

(Voltage Tripler)

Triple

Charge Pump

Capacitor+

BB 11

Gate Drive Output

10 Sense Input

MC33169

–

Power

Gnd

Control Input

Power

Control

Priority

Charge Pump

Capacitor–

Gate Drive Output

Management

Input

Out

(Top View)

Idle

Mode Input

Power Amplifier

Sense

Sense Input

Gnd

Negative

Generator

Charge

Pump

ORDERING INFORMATION

Operating

–

Temperature Range

Package

Device

Output

(– 4.0 V)

MC33169DTB–4.0 T = –40° to +85°C TSSOP–14

This device contains 148 active transistors.

Motorola, Inc. 1998

Rev 2

MOTOROLA ANALOG IC DEVICE DATA

12 3 4 5 6 7...10

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