Datasheet > MC28F008-12

MC28F008-12

更新时间： 2024-09-17 12:02:35

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		/
页数	文件大小	规格书
14页	1170K
描述
8 MBIT (1 MBIT x 8) FLASH MEMORY Extended Cycllng Capablllty

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MC28F008-12 数据手册

M28F008

The M28F008 8-Mbit FlashFile Memory is the highest density nonvolatile read/write solution for solid state

storage. The M28F008’s extended cycling, symmetrically blocked architecture, fast access time, write

automation and low power consumption provide a more reliable, lower power, lighter weight and higher

performance alternative to traditional rotating disk technology. The M28F008 brings new capabilities to portable

computing. Application and operating system software stored in resident ﬂash memory arrays provide instant-

on, rapid execute-in-place and protection from obsolescence through in-system software updates. Resident

software also extends system battery life and increases reliability by reducing disk drive accesses.

For high-density data acquisition applications, the M28F008 offers a more cost-effective and reliable alternative

to SRAM and battery. Traditional high density embedded applications, such as telecommunications, can take

advantage of the M28F008’s nonvolatility, blocking and minimal system code requirements for ﬂexible ﬁrmware

and modular software designs.

The M28F008 is offered in 40-lead sidebrazed DIP and 42-lead Flatpack packages. This device uses an

integrated Command User Interface and state machine for simpliﬁed block erasure and byte write. The

M28F008 memory map consists of 16 separately erasable 64 Kbyte blocks.

The M28F008 employs advanced CMOS circuitry for systems requiring low power consumption and noise

immunity. Its 100 ns access time provides superior performance when compared with magnetic storage media.

A deep powerdown mode lowers power consumption to 500 ♣µW maximum thru V . The RP power control

input also provides absolute data protection during system powerup/down.

For complete Rochester ordering guide, please refer to page 2

Please contact factory for speciﬁc package availability and

Military/Aerospace speciﬁcations/availability.

Rochester Electronics guarantees performance of its semiconductor products to the original OEM speciﬁcations. “Typical” values are for reference purposes

only. Certain minimum or maximum ratings may be based on product characterization, design, simulation, or sample testing. Rochester Electronics reserves

the right to make changes without further notice to any speciﬁcation herein.

Speciﬁcation Number 28F008-M (I) REV C

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与MC28F008-12相关器件

型号	品牌	获取价格	描述	数据表
MC28F008-12/B	ROCHESTER	获取价格	EEPROM,
MC28F008-12B	ROCHESTER	获取价格	8 MBIT (1 MBIT x 8) FLASH MEMORY Extended Cycllng Capablllty
MC28G03G	ETC	获取价格	LCD MODULE
MC28L05F-TP	MCC	获取价格	IC REG LDO 5V 0.1A
MC28U016HACA	SAMSUNG	获取价格	MultiMediaCard Specification
MC28U016HACA-0QC00	SAMSUNG	获取价格	MultiMediaCard Specification
MC28U016HACB-0QC00	SAMSUNG	获取价格	MultiMediaCard Specification
MC28U016HACC-0QC00	SAMSUNG	获取价格	MultiMediaCard Specification
MC28U016HAFA-0QC00	SAMSUNG	获取价格	MultiMediaCard Specification
MC28U016HAFB-0QC00	SAMSUNG	获取价格	MultiMediaCard Specification

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