5秒后页面跳转
MC28F008-10B PDF预览

MC28F008-10B

更新时间: 2024-11-07 12:02:35
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER /
页数 文件大小 规格书
14页 1170K
描述
8 MBIT (1 MBIT x 8) FLASH MEMORY Extended Cycllng Capablllty

MC28F008-10B 数据手册

 浏览型号MC28F008-10B的Datasheet PDF文件第2页浏览型号MC28F008-10B的Datasheet PDF文件第3页浏览型号MC28F008-10B的Datasheet PDF文件第4页浏览型号MC28F008-10B的Datasheet PDF文件第5页浏览型号MC28F008-10B的Datasheet PDF文件第6页浏览型号MC28F008-10B的Datasheet PDF文件第7页 
© 2013 Rochester Electronics, LLC. All Rights Reserved 04242013  
M28F008  
The M28F008 8-Mbit FlashFile Memory is the highest density nonvolatile read/write solution for solid state  
storage. The M28F008’s extended cycling, symmetrically blocked architecture, fast access time, write  
automation and low power consumption provide a more reliable, lower power, lighter weight and higher  
performance alternative to traditional rotating disk technology. The M28F008 brings new capabilities to portable  
computing. Application and operating system software stored in resident flash memory arrays provide instant-  
on, rapid execute-in-place and protection from obsolescence through in-system software updates. Resident  
software also extends system battery life and increases reliability by reducing disk drive accesses.  
For high-density data acquisition applications, the M28F008 offers a more cost-effective and reliable alternative  
to SRAM and battery. Traditional high density embedded applications, such as telecommunications, can take  
advantage of the M28F008’s nonvolatility, blocking and minimal system code requirements for flexible firmware  
and modular software designs.  
The M28F008 is offered in 40-lead sidebrazed DIP and 42-lead Flatpack packages. This device uses an  
integrated Command User Interface and state machine for simplified block erasure and byte write. The  
M28F008 memory map consists of 16 separately erasable 64 Kbyte blocks.  
The M28F008 employs advanced CMOS circuitry for systems requiring low power consumption and noise  
immunity. Its 100 ns access time provides superior performance when compared with magnetic storage media.  
A deep powerdown mode lowers power consumption to 500 ♣µW maximum thru V . The RP power control  
CC  
input also provides absolute data protection during system powerup/down.  
For complete Rochester ordering guide, please refer to page 2  
Please contact factory for specific package availability and  
Military/Aerospace specifications/availability.  
Rochester Electronics guarantees performance of its semiconductor products to the original OEM specifications. “Typical” values are for reference purposes  
only. Certain minimum or maximum ratings may be based on product characterization, design, simulation, or sample testing. Rochester Electronics reserves  
the right to make changes without further notice to any specification herein.  
Specification Number 28F008-M (I) REV C  
Page 1 of 14  

与MC28F008-10B相关器件

型号 品牌 获取价格 描述 数据表
MC28F008-12 ROCHESTER

获取价格

8 MBIT (1 MBIT x 8) FLASH MEMORY Extended Cycllng Capablllty
MC28F008-12/B ROCHESTER

获取价格

EEPROM,
MC28F008-12B ROCHESTER

获取价格

8 MBIT (1 MBIT x 8) FLASH MEMORY Extended Cycllng Capablllty
MC28G03G ETC

获取价格

LCD MODULE
MC28L05F-TP MCC

获取价格

IC REG LDO 5V 0.1A
MC28U016HACA SAMSUNG

获取价格

MultiMediaCard Specification
MC28U016HACA-0QC00 SAMSUNG

获取价格

MultiMediaCard Specification
MC28U016HACB-0QC00 SAMSUNG

获取价格

MultiMediaCard Specification
MC28U016HACC-0QC00 SAMSUNG

获取价格

MultiMediaCard Specification
MC28U016HAFA-0QC00 SAMSUNG

获取价格

MultiMediaCard Specification