5秒后页面跳转
MC2836 PDF预览

MC2836

更新时间: 2024-09-17 04:16:35
品牌 Logo 应用领域
TRSYS 整流二极管光电二极管
页数 文件大小 规格书
1页 61K
描述
Plastic-Encapsulated Diodes

MC2836 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.75Base Number Matches:1

MC2836 数据手册

  
Transys  
Electronics  
L
I M I T E D  
SOT-23 Plastic-Encapsulated Diodes  
MC2836  
SWITCHING DIODE  
SOT-23  
FEATURES  
Power dissipation  
PD:  
150 mW (Tamb=25)  
Forward Current  
2. 4  
IF:  
Reverse Voltage  
VR:  
300 m A  
1. 3  
50  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
Unit: mm  
+
Marking: A41  
_
_
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR  
Test conditions  
IR= 100µA  
MIN  
MAX  
UNIT  
V
50  
Reverse breakdown voltage  
Reverse voltage leakage current  
VR=50V  
0.1  
µA  
IF=10mA  
IF=50mA  
IF=100mA  
0.9  
1
VF  
V
Forward voltage  
1.2  
CD  
t r r  
VR=0V, f=1MHz  
4
4
Diode capacitance  
pF  
nS  
Reverse recovery time  
IF=IR=10mA, IRR=0.1×IR  

与MC2836相关器件

型号 品牌 获取价格 描述 数据表
MC2836_13 ISAHAYA

获取价格

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE
MC2836-12-1 MITSUBISHI

获取价格

Rectifier Diode, 2 Element, 0.1A, Silicon, TO-236
MC2836-T12-1 MITSUBISHI

获取价格

Rectifier Diode, 2 Element, 0.1A, Silicon, TO-236
MC2837 ISAHAYA

获取价格

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE)
MC2837_13 ISAHAYA

获取价格

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE
MC2838 ISAHAYA

获取价格

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE
MC2838 CJ

获取价格

SWITCHING DIODE
MC2838 CJ

获取价格

SOT-23
MC2838-12-1 MITSUBISHI

获取价格

Rectifier Diode, 2 Element, 0.1A, Silicon, TO-236
MC2838-SOT-23 CJ

获取价格

SWITCHING DIODE