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MC1413BDG PDF预览

MC1413BDG

更新时间: 2024-11-04 04:41:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管达林顿晶体管开关光电二极管PC
页数 文件大小 规格书
8页 76K
描述
High Voltage, High Current Darlington Transistor Arrays

MC1413BDG 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:LEAD FREE, CASE 751B-05, SOIC-16针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.04
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:225174Samacsys Pin Count:16
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SOIC-16 CASE751B-05Samacsys Released Date:2015-08-07 10:05:56
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:COMPLEX最小直流电流增益 (hFE):1000
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
湿度敏感等级:1元件数量:7
端子数量:16最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MC1413BDG 数据手册

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MC1413, MC1413B,  
NCV1413B  
High Voltage, High Current  
Darlington Transistor Arrays  
The seven NPN Darlington connected transistors in these arrays are  
well suited for driving lamps, relays, or printer hammers in a variety of  
industrial and consumer applications. Their high breakdown voltage  
and internal suppression diodes insure freedom from problems  
associated with inductive loads. Peak inrush currents to 500 mA  
permit them to drive incandescent lamps.  
http://onsemi.com  
PDIP−16  
P SUFFIX  
CASE 648  
16  
The MC1413, B with a 2.7 kW series input resistor is well suited for  
systems utilizing a 5.0 V TTL or CMOS Logic.  
1
SOIC−16  
D SUFFIX  
CASE 751B  
Features  
Pb−Free Packages are Available*  
16  
NCV Prefix for Automotive and Other Applications Requiring Site  
1
and Control Changes  
ORDERING INFORMATION  
1/7 MC1413, B  
Device  
MC1413D  
Package  
Shipping  
2.7 k  
5.0 k  
Pin 9  
SOIC−16  
48 Units/Rail  
48 Units/Tube  
MC1413DG  
SOIC−16  
(Pb−Free)  
3.0 k  
MC1413DR2  
SOIC−16 2500 Tape & Reel  
MC1413DR2G  
SOIC−16 2500 Tape & Reel  
(Pb−Free)  
Figure 1. Representative Schematic Diagram  
MC1413P  
PDIP−16  
25 Units/Rail  
25 Units/Rail  
MC1413PG  
PDIP−16  
(Pb−Free)  
1
2
3
4
5
6
16  
15  
14  
13  
12  
11  
10  
9
MC1413BD  
SOIC−16  
48 Units/Rail  
48 Units/Rail  
MC1413BDG  
SOIC−16  
(Pb−Free)  
MC1413BDR2  
SOIC−16 2500 Tape & Reel  
MC1413BDR2G  
SOIC−16 2500 Tape & Reel  
(Pb−Free)  
MC1413BP  
PDIP−16  
25 Units/Rail  
25 Units/Rail  
MC1413BPG  
PDIP−16  
(Pb−Free)  
NCV1413BDR2  
SOIC−16 2500 Tape & Reel  
NCV1413BDR2G SOIC−16 2500 Tape & Reel  
(Pb−Free)  
7
8
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(Top View)  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
Figure 2. PIN CONNECTIONS  
section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 8  
MC1413/D  

MC1413BDG 替代型号

型号 品牌 替代类型 描述 数据表
MC1413DR2G ONSEMI

完全替代

High Voltage, High Current Darlington Transistor Arrays
MC1413DG ONSEMI

完全替代

High Voltage, High Current Darlington Transistor Arrays
MC1413PG ONSEMI

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High Voltage, High Current Darlington Transistor Arrays

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