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MC14106BDTR2G PDF预览

MC14106BDTR2G

更新时间: 2024-11-04 04:41:03
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
10页 153K
描述
Hex Schmitt Trigger

MC14106BDTR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP14,.25针数:14
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:1.01系列:4000/14000/40000
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm逻辑集成电路类型:INVERTER
湿度敏感等级:1功能数量:6
输入次数:1端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:5/15 V
Prop。Delay @ Nom-Sup:250 ns传播延迟(tpd):250 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:1.2 mm子类别:Gates
最大供电电压 (Vsup):18 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm
Base Number Matches:1

MC14106BDTR2G 数据手册

 浏览型号MC14106BDTR2G的Datasheet PDF文件第2页浏览型号MC14106BDTR2G的Datasheet PDF文件第3页浏览型号MC14106BDTR2G的Datasheet PDF文件第4页浏览型号MC14106BDTR2G的Datasheet PDF文件第5页浏览型号MC14106BDTR2G的Datasheet PDF文件第6页浏览型号MC14106BDTR2G的Datasheet PDF文件第7页 
MC14106B  
Hex Schmitt Trigger  
The MC14106B hex Schmitt Trigger is constructed with MOS  
Pchannel and Nchannel enhancement mode devices in a single  
monolithic structure. These devices find primary use where low power  
dissipation and/or high noise immunity is desired. The MC14106B  
may be used in place of the MC14069UB hex inverter for enhanced  
noise immunity or to “square up” slowly changing waveforms.  
This device contains protection circuitry to guard against damage  
due to high static voltages or electric fields. However, precautions  
must be taken to avoid applications of any voltage higher than  
maximum rated voltages to this highimpedance circuit. For proper  
http://onsemi.com  
MARKING  
DIAGRAMS  
14  
MC14106BCP  
AWLYYWWG  
operation, V and V should be constrained to the range V v (V  
in  
out  
SS  
in  
or V ) v V  
.
out  
DD  
PDIP14  
P SUFFIX  
CASE 646  
1
Unused inputs must always be tied to an appropriate logic voltage  
level (e.g., either V or V ). Unused outputs must be left open.  
SS  
DD  
Features  
14  
Increased Hysteresis Voltage Over the MC14584B  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
14106BG  
AWLYWW  
Capable of Driving Two Lowpower TTL Loads or One Lowpower  
Schottky TTL Load Over the Rated Temperature Range  
PinforPin Replacement for CD40106B and MM74C14  
Can Be Used to Replace the MC14584B or MC14069UB  
SOIC14  
D SUFFIX  
CASE 751A  
1
14  
14  
106B  
ALYWG  
G
PbFree Packages are Available  
14  
1
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
1
TSSOP14  
DT SUFFIX  
CASE 948G  
Symbol  
Parameter  
Value  
0.5 to +18.0  
Unit  
V
V
DC Supply Voltage Range  
DD  
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V + 0.5  
V
DD  
A
= Assembly Location  
= Year  
WL, L = Wafer Lot  
YY, Y  
I , I  
in out  
Input or Output Current  
(DC or Transient) per Pin  
±10  
mA  
WW, W = Work Week  
G or G = PbFree Package  
P
Power Dissipation, per Package  
(Note 1)  
500  
mW  
D
(Note: Microdot may be in either location)  
T
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
A
T
stg  
ORDERING INFORMATION  
T
Lead Temperature  
L
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
(8Second Soldering)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Temperature Derating: Plastic “P and D/DW” Packages: – 7.0 mW/°C From  
65°C To 125°C  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 Rev. 7  
MC14106B/D  
 

MC14106BDTR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC14584BDTR2G ONSEMI

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