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MC14093BCPG PDF预览

MC14093BCPG

更新时间： 2024-11-04 04:59:31
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
9页 160K
描述
Quad 2−Input NAND Schmitt Trigger

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中文翻译

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MC14093BCPG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DIP
包装说明：DIP, DIP14,.3针数：14
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.47系列：4000/14000/40000
JESD-30 代码：R-PDIP-T14JESD-609代码：e3
长度：18.86 mm负载电容（CL）：50 pF
逻辑集成电路类型：NAND GATE功能数量：4
输入次数：2端子数量：14
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP14,.3封装形状：RECTANGULAR
封装形式：IN-LINE包装方法：RAIL
峰值回流温度（摄氏度）：260电源：5/15 V
Prop。Delay @ Nom-Sup：250 ns传播延迟（tpd）：250 ns
认证状态：Not Qualified施密特触发器：YES
座面最大高度：4.69 mm子类别：Gates
最大供电电压 (Vsup)：18 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子面层：Matte Tin (Sn) - annealed端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：7.62 mm
Base Number Matches：1

MC14093BCPG 数据手册

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MC14093B  
Quad 2−Input ꢀNAND"  
Schmitt Trigger  
The MC14093B Schmitt trigger is constructed with MOS  
P−channel and N−channel enhancement mode devices in a single  
monolithic structure. These devices find primary use where low power  
dissipation and/or high noise immunity is desired. The MC14093B  
may be used in place of the MC14011B quad 2−input NAND gate for  
enhanced noise immunity or to “square up” slowly changing  
waveforms.  
http://onsemi.com  
MARKING  
DIAGRAMS  
14  
PDIP−14  
P SUFFIX  
CASE 646  
Features  
MC14093BCP  
AWLYYWWG  
• Supply Voltage Range = 3.0 Vdc to 18 Vdc  
• Capable of Driving Two Low−Power TTL Loads or One Low−Power  
Schottky TTL Load Over the Rated Temperature Range  
• Triple Diode Protection on All Inputs  
• Pin−for−Pin Compatible with CD4093  
• Can be Used to Replace MC14011B  
1
14  
SOIC−14  
D SUFFIX  
CASE 751A  
14093BG  
AWLYWW  
1
• Independent Schmitt−Trigger at each Input  
• Pb−Free Packages are Available  
14  
1
14  
093B  
ALYW G  
G
TSSOP−14  
DT SUFFIX  
CASE 948G  
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
Symbol  
Parameter  
Value  
−0.5 to +18.0  
Unit  
V
V
DC Supply Voltage Range  
DD  
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
−0.5 to V + 0.5  
V
DD  
14  
I , I  
Input or Output Current  
(DC or Transient) per Pin  
±10  
mA  
in out  
SOEIAJ−14  
F SUFFIX  
CASE 965  
MC14093B  
ALYWG  
P
Power Dissipation,  
per Package (Note 1)  
500  
mW  
D
1
T
Ambient Temperature Range  
Storage Temperature Range  
−55 to +125  
−65 to +150  
260  
°C  
°C  
°C  
A
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
= Year  
T
stg  
T
Lead Temperature  
(8−Second Soldering)  
L
WW, W = Work Week  
G or G  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Temperature Derating:  
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
high−impedance circuit. For proper operation, V and V should be constrained  
in  
out  
to the range V v (V or V ) v V  
.
SS  
in  
out  
DD  
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,  
either V or V ). Unused outputs must be left open.  
SS  
DD  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 7  
MC14093B/D  
 
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中文翻译

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MC14093BCPG 替代型号

型号 品牌 替代类型 描述 数据表
MC14011BCPG ONSEMI

类似代替

 B-SUFFIX SERIES CMOS GATES
MC14011UBCP ONSEMI

类似代替

 UB-Suffix Series CMOS Gates
MC14011UBCPG ONSEMI

类似代替

 UB-Suffix Series CMOS Gates

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