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MC14073BCP PDF预览

MC14073BCP

更新时间: 2024-11-19 22:58:11
品牌 Logo 应用领域
安森美 - ONSEMI 触发器逻辑集成电路光电二极管
页数 文件大小 规格书
12页 138K
描述
B-SUFFIX SERIES CMOS GATES

MC14073BCP 数据手册

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MC14001B Series  
B−Suffix Series CMOS Gates  
MC14001B, MC14011B, MC14023B,  
MC14025B, MC14071B, MC14073B,  
MC14081B, MC14082B  
http://onsemi.com  
MARKING  
The B Series logic gates are constructed with P and N channel  
enhancement mode devices in a single monolithic structure  
(Complementary MOS). Their primary use is where low power  
dissipation and/or high noise immunity is desired.  
DIAGRAMS  
14  
PDIP−14  
P SUFFIX  
CASE 646  
Features  
MC140xxBCP  
AWLYYWW  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
All Outputs Buffered  
Capable of Driving Two Low−power TTL Loads or One Low−power  
Schottky TTL Load Over the Rated Temperature Range.  
Double Diode Protection on All Inputs Except: Triple Diode  
Protection on MC14011B and MC14081B  
1
14  
SOIC−14  
D SUFFIX  
CASE 751A  
140xxB  
AWLYWW  
1
14  
Pin−for−Pin Replacements for Corresponding CD4000 Series  
B Suffix Devices  
TSSOP−14  
DT SUFFIX  
CASE 948G  
14  
0xxB  
ALYW  
Pb−Free Packages are Available*  
1
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
14  
Symbol  
Parameter  
Value  
0.5 to +18.0  
Unit  
V
SOEIAJ−14  
F SUFFIX  
CASE 965  
MC140xxB  
AWLYWW  
V
DD  
DC Supply Voltage Range  
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V + 0.5  
V
DD  
1
I , I  
in out  
Input or Output Current  
(DC or Transient) per Pin  
±10  
mA  
xx  
A
WL, L  
YY, Y  
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
P
D
Power Dissipation, per Package  
(Note 1)  
500  
mW  
= Year  
WW, W = Work Week  
T
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
A
T
stg  
DEVICE INFORMATION  
Description  
T
Lead Temperature  
(8−Second Soldering)  
L
Device  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MC14001B  
MC14011B  
Quad 2−Input NOR Gate  
Quad 2−Input NAND Gate  
MC14023B  
MC14025B  
MC14071B  
MC14073B  
Triple 3−Input NAND Gate  
Triple 3−Input NOR Gate  
Quad 2−Input OR Gate  
Triple 3−Input AND Gate  
1. Temperature Derating:  
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
high−impedance circuit. For proper operation, V and V should be constrained  
MC14081B  
MC14082B  
Quad 2−Input AND Gate  
Dual 4−Input AND Gate  
in  
out  
to the range V v (V or V ) v V  
.
SS  
in  
out  
DD  
Unused inputs must always be tied to an appropriate logic voltage level  
(e.g., either V or V ). Unused outputs must be left open.  
SS  
DD  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 4  
MC14001B/D  
 

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