5秒后页面跳转
MC14011BCP PDF预览

MC14011BCP

更新时间: 2024-11-04 04:59:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA
页数 文件大小 规格书
11页 330K
描述
B-Suffix Series CMOS Gates

MC14011BCP 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:DIP包装说明:DIP,
针数:14Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.33
系列:4000/14000/40000JESD-30 代码:R-PDIP-T14
JESD-609代码:e0长度:18.86 mm
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
功能数量:4输入次数:2
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
传播延迟(tpd):250 ns认证状态:Not Qualified
座面最大高度:4.69 mm最大供电电压 (Vsup):18 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

MC14011BCP 数据手册

 浏览型号MC14011BCP的Datasheet PDF文件第2页浏览型号MC14011BCP的Datasheet PDF文件第3页浏览型号MC14011BCP的Datasheet PDF文件第4页浏览型号MC14011BCP的Datasheet PDF文件第5页浏览型号MC14011BCP的Datasheet PDF文件第6页浏览型号MC14011BCP的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
The B Series logic gates are constructed with P and N channel  
enhancement mode devices in a single monolithic structure (Complemen-  
tary MOS). Their primary use is where low power dissipation and/or high  
noise immunity is desired.  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
All Outputs Buffered  
Capable of Driving Two Low–power TTL Loads or One Low–power  
Schottky TTL Load Over the Rated Temperature Range.  
Double Diode Protection on All Inputs Except: Triple Diode Protection  
on MC14011B and MC14081B  
Pin–for–Pin Replacements for Corresponding CD4000 Series B Suffix  
Devices (Exceptions: MC14068B and MC14078B)  
L SUFFIX  
CERAMIC  
CASE 632  
P SUFFIX  
PLASTIC  
CASE 646  
D SUFFIX  
SOIC  
CASE 751A  
ORDERING INFORMATION  
MC14XXXBCP  
MC14XXXBCL  
MC14XXXBD  
Plastic  
Ceramic  
SOIC  
T
A
= – 55° to 125°C for all packages.  
MAXIMUM RATINGS* (Voltages Referenced to V  
)
SS  
Symbol  
Parameter  
DC Supply Voltage  
Value  
Unit  
V
V
DD  
– 0.5 to + 18.0  
V , V  
Input or Output Voltage (DC or Transient)  
– 0.5 to V  
DD  
+ 0.5  
V
in out  
l , l  
Input or Output Current (DC or Transient),  
per Pin  
± 10  
mA  
in out  
P
Power Dissipation, per Package†  
Storage Temperature  
500  
mW  
C
D
T
stg  
– 65 to + 150  
260  
T
Lead Temperature (8–Second Soldering)  
C
L
* Maximum Ratings are those values beyond which damage to the device may occur.  
Temperature Derating:  
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C  
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125 C  
This device contains protection circuitry to guard against damage  
due to high static voltages or electric fields. However, precautions must  
be taken to avoid applications of any voltage higher than maximum rated  
voltages to this high-impedance circuit. For proper operation, V and  
in  
V
out  
should be constrained to the range V  
SS  
(V or V ) V .  
in out DD  
Unused inputs must always be tied to an appropriate logic voltage  
level (e.g., either V or V ). Unused outputs must be left open.  
SS DD  
REV 3  
1/94  
Motorola, Inc. 1995  

MC14011BCP 替代型号

型号 品牌 替代类型 描述 数据表
MC14011BCL MOTOROLA

功能相似

B-Suffix Series CMOS Gates
HEF4011BP NXP

功能相似

Quadruple 2-input NAND gate
MC14011UBCPG ONSEMI

功能相似

UB-Suffix Series CMOS Gates

与MC14011BCP相关器件

型号 品牌 获取价格 描述 数据表
MC14011BCPD MOTOROLA

获取价格

4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, PDIP14, PLASTIC, DIP-14
MC14011BCPDS MOTOROLA

获取价格

NAND Gate, 4000/14000/40000 Series, 4-Func, 2-Input, CMOS, PDIP14, 646-06
MC14011BCPG ONSEMI

获取价格

B-SUFFIX SERIES CMOS GATES
MC14011BCPS MOTOROLA

获取价格

NAND Gate, CMOS, PDIP14
MC14011BD ONSEMI

获取价格

B-SUFFIX SERIES CMOS GATES
MC14011BD MOTOROLA

获取价格

B-Suffix Series CMOS Gates
MC14011BDCBS MOTOROLA

获取价格

NAND Gate, CMOS, CDIP14
MC14011BDG ONSEMI

获取价格

B-Suffix Series CMOS Gates
MC14011BDR2 MOTOROLA

获取价格

NAND Gate, 4000/14000/40000 Series, 4-Func, 2-Input, CMOS, PDSO14, PLASTIC, SOIC-14
MC14011BDR2 ONSEMI

获取价格

B-SUFFIX SERIES CMOS GATES